Memory system storing management information and method of controlling same
View Patent ↗A memory system includes a management-information restoring unit. The management-information restoring unit determines whether a short break has occurred referring to a pre-log or a post-log in a NAND memory. The management-information restoring unit determines that a short break has occurred when the pre-log or the post-log is present in the NAND memory. In that case, the management-information restoring unit determines timing of occurrence of the short break, and, after selecting a pre-log or a post-log used for restoration, performs restoration of the management information reflecting these logs on a snapshot. Thereafter, the management-information restoring unit applies recovery processing to all write-once blocks in the NAND memory, takes the snapshot again, and opens the snapshot and the logs in the past.
1. A memory system comprising:
a nonvolatile memory;
a memory controller configured to perform data management in the nonvolatile memory based on one part of first management information,
wherein the memory controller includes:
a management-information storing unit configured to store a first log created before updating the first management information and a second log created after updating the first management information, and to store the first management information in the nonvolatile memory as second management information; and
in a case of a power cut, the management-information storing unit is configured to store the first management information as third management information in the nonvolatile memory.
2. The memory system according to claim 1 , wherein the management-information storing unit is configured to invalidate the log after storing the third management information in the nonvolatile memory.
3. The memory system according to claim 1 , wherein
the nonvolatile memory includes a plurality of blocks, each one of the plurality of blocks being a data erasing unit and including a plurality of pages, each one of the plurality of pages being a data programming unit, and
the management-information storing unit is configured to store the log by a page unit in each one of the plurality of blocks.
4. The memory system according to claim 1 , wherein the first log and the second log have same contents as each other.
5. The memory system according to claim 1 , wherein the nonvolatile memory is a NAND flash memory.
6. A memory system comprising:
a nonvolatile memory;
a memory controller configured to perform data management based on management information,
wherein the memory controller configured to:
store a first log created before updating the management information and a second log created after updating the management information, and to store the management information in the nonvolatile memory; and
in a case of a power cut, store the updated management information and a log stored in the nonvolatile memory and to store the management information in the nonvolatile memory.
7. A method of controlling a memory system comprising:
managing the data by using first management information; and
storing a first log created before updating the first management information and a second log created after updating the first management information;
storing the first management information in the memory as second management information; and
in a case of having an error in the memory system, storing the first management information as third management information.
8. The method according to claim 7 , further comprising:
invalidating the log after storing the third management information in the memory.
9. The method according to claim 7 , wherein
the memory includes a plurality of blocks, each one of the plurality of blocks being a data erasing unit and including a plurality of pages, each one of the plurality of pages being a data programming unit, and further comprising:
storing the log by a page unit in each one of the plurality of blocks.
10. The method according to claim 7 , wherein the first log and the second log have same contents as each other.
11. The method according to claim 7 , wherein the memory is a NAND flash memory.