SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.
1 . A semiconductor light emitting device, comprising:
a semiconductor layer including a light emitting layer;
a first electrode provided on a first side of the semiconductor layer;
a first layer provided on a second side of the semiconductor layer and including a first metal, the second side being opposed to the first side;
a second layer provided on the second side of the semiconductor layer and protruding from the semiconductor layer to cover the first layer;
a substrate provided with a second electrode and connected to the second layer; and
an insulating film provided on the first side of the semiconductor layer, wherein the second layer includes a third layer including a second metal and a fourth layer including a third metal, the third layer is provided closer to the substrate than the fourth layer, a silicon nitride is included in an area which is a surface of the second layer at the side of the semiconductor layer and protrudes from an edge of the semiconductor layer.
2 . The semiconductor light emitting device according to claim 1 , wherein
a width of the semiconductor layer becomes wider toward the second layer from the first electrode.
3 . The semiconductor light emitting device according to claim 1 , wherein
the second layer serves as a stopper when etching the semiconductor layer by etching technique.
4 . The semiconductor light emitting device according to claim 1 , wherein
an area of the first layer is smaller than that of the second surface of the semiconductor layer.
5 . The semiconductor light emitting device according to claim 1 , wherein
the second layer covers a sidewall of the first layer and a first surface of the first layer at the side opposite to the semiconductor layer.
6 . The semiconductor light emitting device according to claim 1 , wherein
the insulating film extends a sidewall of the semiconductor layer and a portion of the second layer protruding from the second layer.
7 . The semiconductor light emitting device according to claim 1 , wherein
the substrate is bonded to the second layer.
8 . The semiconductor light emitting device according to claim 7 , wherein
the second layer includes a fifth layer including gold between the third layer and the substrate.
9 . The semiconductor light emitting device according to claim 7 , wherein
the second layer includes a layer including nickel between the first layer and the fourth layer.
10 . The semiconductor light emitting device according to claim 1 , wherein
the first layer is buried into the semiconductor layer so that a surface which is in contact with the second layer is flush with the second surface of the semiconductor layer.
11 . The semiconductor light emitting device according to claim 1 , wherein
the first surface of the semiconductor layer is formed concavo-convex.