Semiconductor device manufacturing method and semiconductor device
View Patent ↗A semiconductor device manufacturing method includes forming grooves in a surface of a semiconductor substrate, stacking a plurality of semiconductor chips in each area of the semiconductor substrate surrounded by the grooves to form stacked bodies, forming a first sealing resin layer that covers spaces between the plurality of semiconductor chips and lateral sides of the stacked bodies, separating the semiconductor substrate to singulate the stacked bodies, mounting the stacked bodies on a wiring substrate, forming a second sealing resin layer that seals the stacked bodies on the wiring substrate, separating the wiring substrate to singulate a portion of the wiring substrate with a single stacked body thereon, and grinding a portion of the semiconductor substrate in a thickness direction from a side of the semiconductor substrate opposite to the stacked bodies, after forming the first sealing resin layer and before singulating the wiring substrate.
1. A semiconductor device manufacturing method comprising:
forming a plurality of grooves in a surface of a semiconductor substrate and forming a plurality of isolated pad areas, each pad area surrounded by one of the grooves;
forming a stacked body by stacking a plurality of semiconductor chips on each pad area of the semiconductor substrate;
forming a first sealing resin layer to fill spaces between the plurality of semiconductor chips that have been stacked and on the lateral sides of the plurality of semiconductor chips that have been stacked;
separating the semiconductor substrate into a plurality of singulated stacked bodies each having a pad area and a plurality of semiconductor chips stacked thereon;
mounting the stacked bodies on a wiring substrate;
forming a second sealing resin layer that seals the stacked bodies on the wiring substrate;
separating the wiring substrate into sections, each section having a single stacked body thereon; and
grinding a portion of the semiconductor substrate in a thickness direction from a side opposite to a side where the stacked bodies of the semiconductor substrate are formed, after forming the first sealing resin layer and before separating the wiring substrate.
2. The method according to claim 1 , further comprising:
grinding a portion of the semiconductor substrate after forming the second sealing resin layer.
3. The method according to claim 2 , further comprising;
before grinding a portion of the semiconductor substrate, removing at least a portion of the second sealing resin layer.
4. The method according to claim 1 , further comprising:
grinding a portion of the semiconductor substrate before separating the semiconductor substrate.
5. The method according to claim 1 , wherein said separating the semiconductor substrate includes:
cutting the semiconductor substrate into a plurality of singulated stacked bodies each having a pad area and a plurality of semiconductor chips while also cutting the first sealing resin layer.
6. The method according to claim 5 , further comprising:
cutting the semiconductor substrate at a location of, or to the stacked body side of, the grooves.
7. The method according to claim 1 , further comprising:
while forming the first sealing resin layer, flowing any excess first resin material into at least a portion of the groove surrounding the pad area.
8. The method according to claim 1 , wherein two grooves extend between adjacent pad areas.
9. The method of claim 1 , further comprising cutting the grooves in straight lines in a lattice pattern to form a plurality of rectangular pad areas.
10. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate:
forming a plurality of grooves in a surface of the semiconductor substrate in a rectilinear grid pattern, a plurality of rectangular pad areas being defined between grooves, such that at least two grooves extend between two adjacent pad areas;
forming, on each pad area, a stacked body of semiconductor chips having spaces therebetween;
injecting, into the spaces between adjacent semiconductor chips, a resin material and allowing excess resin material to flow into, and be captured in, at least a portion of the groove defining the pad area;
singulating the pad areas of the semiconductor substrates and the stacked bodies thereon by cutting through the semiconductor substrate and at least a portion of the resin material extending between the stacked body and an adjacent groove;
providing a wiring substrate having a plurality of terminal portions on a first face and on a second face thereof;
positioning a stacked body on at least two of the terminal portions on the first face of the wiring substrate;
locating a sealing resin intermediate of the stacked bodies; and
cutting through the wiring substrate and the sealing resin to form a semiconductor device.
11. The method of claim 10 , further comprising:
positioning a stacked body on at least two of the terminal portions on the first face of the wiring substrate before singulating the pad areas of the semiconductor substrates and the stacked bodies thereon by cutting through the semiconductor substrate and at least a portion of the resin material extending between the stacked body and an adjacent groove.
12. The method of claim 10 , further comprising:
positioning a controller chip intermediate of the stacked body and the semiconductor substrate.
13. The method of claim 12 , further comprising:
positioning the stacked body to be spaced from the wiring substrate such that the controller chip is spaced from the wiring substrate.
14. The method of claim 13 , further comprising introducing an underfill resin between the stacked body and wiring substrate.