Semiconductor device leadframe
View Patent ↗For so called film assisted moulding (FAM) device processing techniques there is provided lead frame for a semiconductor device, comprising a base portion and a connection lead, said base portion arranged for mounting a semiconductor die, said connection lead comprising a horizontal portion for external connection and an angled portion for connection to said semiconductor die, wherein the angled portion has a positive angle with respect to the base portion. The connection lead may comprise a recessed portion.
1. A lead frame for a semiconductor device manufactured by film assisted moulding, the lead frame comprising: a base portion; and a connection lead, and a plurality of connection leads,
wherein the base portion comprises an upper surface arranged for mounting one or more semiconductor device dies, the one or more semiconductor device dies being configured to be electrically connected to the plurality of connection leads using respective bond wires;
wherein each connection lead that is to be electrically connected to the one or more semiconductor device dies comprises a portion arranged horizontally with respect to the upper surface of the base portion for external connection and an angled tip portion for connection to the semiconductor die, and
wherein the angled tip portion is arranged to be resiliently biased against and to seal against a film during moulding of the semiconductor device, and
wherein the angled tip portion subtends a positive angle of 3 to 10 degrees with respect to the upper surface of the base portion.
2. The lead frame of claim 1 , wherein the angled tip portion subtends a positive angle with respect to the upper surface of the base portion of between 3 and 5 degrees.
3. The lead frame of claim 2 , wherein said positive angle is 4 degrees.
4. The lead frame of claim 1 , wherein the connection lead is a floating lead.
5. The lead frame of claim 4 , wherein said floating lead is physically isolated from the base.
6. The lead frame of claim 1 , wherein the film is an upper portion of a film used in film assisted moulding.
7. The lead frame of claim 1 , wherein the angled tip portion substantially overlaps the base portion.
8. The lead frame of claim 1 , wherein the tip portion is arranged to such that following moulding it is substantially horizontal with respect to said base portion.
9. The lead frame of claim 8 , wherein the thickness of said lead is between 0.2 mm and 0.5 mm.
10. The lead frame of claim 1 , wherein the semiconductor device is an RF device.
11. The lead frame of claim 10 , wherein the RF device is an amplifier device.
12. The lead frame of claim 1 wherein an edge of said angled portion comprises a recessed portion.
13. The lead frame of claim 12 , wherein the recessed portion is a step portion or a groove portion.
14. The lead frame of claim 13 , wherein said recessed portion is arranged to locally deform said film during manufacture of said semiconductor device.
15. A lead frame for a semiconductor device manufactured by film assisted moulding, the lead frame comprising: a base portion; and a plurality of connection leads,
wherein the base portion comprises an upper surface arranged for mounting one or more semiconductor device dies, said semiconductor device dies being configured to be electrically connected to the plurality of connection leads using respective bondwires;
wherein each connection lead that is to be electrically connected to said one or more semiconductor device dies comprises a portion arranged horizontally with respect to the upper surface of the base portion for external connection and an angled tip portion for connection to the semiconductor die,
wherein the angled tip portion is arranged to seal against a film during moulding of the semiconductor device, and
wherein an edge of said angled portion comprises a recessed portion.
16. The lead frame of claim 15 , wherein the recessed portion is a step portion or a groove portion.
17. The lead frame of claim 16 , wherein said recessed portion is arranged to locally deform said film during manufacture of said semiconductor device.
18. A cavity molded package comprising:
a moulded product comprising the lead frame of claim 1 and cured moulding compound, wherein the moulding compound is arranged at the top and bottom of the leads, where the leads overlap the base portion and further between the leads and the base portion, such that a first cavity is kept free of moulding compound, which first cavity comprising the upper surface for mounting one or more semiconductor device dies and the angled portions of the leads;
one or more semiconductor device dies mounted on the upper surface of the base portion and arranged in the first cavity, and
a plurality of bondwires connected between the one or more semiconductor device dies and the plurality of respective connection leads,
wherein the angled tip portion is obtained horizontal after the moulding process and wherein the lead contains a tail bend mark resulting from angling the lead to form the angled tip portion and then being deformed during the moulding process to be substantially flat.
19. The package of claim 18 , wherein the one or more semiconductor device dies is an RF power amplifier device.