Mask data generation method, mask data generation system, and recording medium

1. A method of manufacturing a semiconductor device, the method comprising:

obtaining depth information about a pattern depth of a hole included in design information about the semiconductor device;

obtaining a first correction rule used to correct, in terms of the pattern depth, a process conversion difference between a resist pattern and a processed pattern;

creating temporary mask data including a lithography target pattern by applying a first process conversion difference correction processing to a dimension of hole pattern arranged in design layout data based on the depth information and the first correction rule;

generating mask data based on the temporary mask data;

generating a mask using the generated mask data; and

illuminating an illumination light on the generated mask to form a latent image on photosensitive material on a substrate via a projection optical system.

2. A method of manufacturing a semiconductor device, the method comprising:

obtaining depth information about a pattern depth of a hole included in design information about the semiconductor device;

obtaining a first correction rule used to correct, in terms of the pattern depth, a process conversion difference between a resist pattern and a processed pattern;

creating temporary mask data including a lithography target pattern by applying a first process conversion difference correction processing to a dimension of hole pattern arranged in design layout data based on the depth information and the first correction rule;

generating mask data by applying an optical proximity correction processing to the lithography target pattern in the temporary mask data so that a resist pattern to be developed can reach the lithography target pattern;

generating a mask using the generated mask data; and

illuminating an illumination light on the generated mask to form a latent image on photosensitive material on a substrate via a projection optical system.

3. A method of manufacturing a semiconductor device, the method comprising:

obtaining depth information about a pattern depth of a hole included in design information about the semiconductor device;

obtaining a first correction rule used to correct, in terms of the pattern depth, a process conversion difference between a resist pattern and a processed pattern;

creating temporary mask data including a lithography target pattern by applying a first process conversion difference correction processing to a dimension of hole pattern arranged in design layout data based on the depth information and the first correction rule;

generating mask data based on the temporary mask data;

generating a mask using the generated mask data; and

illuminating an illumination light on the generated mask to form a latent image on photosensitive material on a substrate via a projection optical system,

wherein the first process conversion difference correction processing includes correcting the dimension of the hole pattern by a first correction amount when the pattern depth of the hole pattern is a first depth, and correcting the dimension of the hole pattern by a second correction amount larger than the first correction amount when the pattern depth of the hole pattern is a second depth deeper than the first depth.