Magnetic memory device
View Patent ↗According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
1. A magnetic memory device comprising:
a stacked structure including a magnetic element;
a protective insulating film covering the stacked structure; and
an interface layer provided at an interface between the stacked structure and the protective insulating film,
wherein the interface layer contains a first predetermined element selected from argon (Ar), xenon (Xe), krypton (Kr), neon (Ne), phosphorus (P), and carbon (C), and a concentration of the first predetermined element contained in the interface layer is higher than both of (i) a concentration of the first predetermined element contained in the magnetic element and (ii) a concentration of the first predetermined element contained in the protective insulating film.
2. The device of claim 1 , wherein the magnetic element contains at least one of cobalt (Co), iron (Fe), boron (B) and magnesium (Mg).
3. The device of claim 1 , wherein the protective insulating film contains silicon (Si) and nitrogen (N).
4. The device of claim 1 , wherein a linear coefficient of thermal expansion of at least one material contained in the magnetic element is greater than a linear coefficient of thermal expansion of a material contained in the protective insulating film.
5. The device of claim 1 , wherein the magnetic element includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.
6. A magnetic memory device comprising:
a stacked structure including a magnetic element;
a protective insulating film covering the stacked structure; and
an interface layer provided at an interface between the stacked structure and the protective insulating film, wherein
the interface layer contains a second predetermined element selected from nitrogen (N) and boron (B), and a concentration of the second predetermined element contained in the interface layer is higher than both of (i) a concentration of the second predetermined element contained in the magnetic element and (ii) a concentration of the second predetermined element contained in the protective insulating film.
7. The device of claim 6 , wherein the magnetic element contains at least one of cobalt (Co), iron (Fe), boron (B) and magnesium (Mg).
8. The device of claim 6 , wherein the protective insulating film contains silicon (Si) and nitrogen (N).
9. The device of claim 6 , wherein a linear coefficient of thermal expansion of at least one material contained in the magnetic element is greater than a linear coefficient of thermal expansion of a material contained in the protective insulating film.
10. The device of claim 6 , wherein the magnetic element includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.