Semiconductor device and semiconductor device manufacturing method
According to an embodiment, a semiconductor device is provided. The semiconductor device includes a through-hole, a copper layer, and a metal portion. The through-hole penetrates a semiconductor substrate between front and rear sides. The copper layer is formed inside the through-hole. The metal portion is made of a metal other than copper, formed closer to a hole core side of the through-hole than the copper layer is, and involves a void therein.
1. A semiconductor device manufacturing method comprising:
forming a through-hole surrounded by an insulating film at least at a first surface of a semiconductor substrate, wherein the through-hole penetrates a semiconductor substrate between the first surface and a second surface of the semiconductor substrate and is made such that a dimension of one opening of the through-hole is smaller than a dimension of the other opening of the through-hole, the second surface being opposite to the first surface, the one opening of the through-hole being formed on the first surface; and
forming a metal portion by conformal plating inside the through-hole having the other opening closed, the metal portion involving therein a void that is closed at the one opening of the through-hole, the through-hole being made such that a dimension of a cross section orthogonal to a thickness direction of the substrate becomes gradually larger from the one opening toward an intermediate portion of the through-hole in a direction toward the other opening and is kept constant from the intermediate portion to at least another intermediate portion in a direction toward the other opening.
2. The semiconductor device manufacturing method according to claim 1 , wherein the forming the through-hole comprises
forming a cylindrical void that penetrates the substrate between the first surface and the second surface,
covering an inner peripheral surface of the cylindrical void with the insulating film, and
processing the insulating film to make the through-hole such that the dimension of the one opening is smaller than the dimension of the other opening.
3. The semiconductor device manufacturing method according to claim 1 , further comprising forming a first pad on the second surface of the substrate, the first pad being connected to the metal portion.
4. The semiconductor device manufacturing method according to claim 1 , further comprising forming a first pad on the second surface of the substrate before forming the through-hole, the first pad being connected to the metal portion.
5. The semiconductor device manufacturing method according to claim 1 , further comprising forming a seed film inside the through-hole,
wherein the metal portion is formed on the seed film.
6. The semiconductor device manufacturing method according to claim 5 , further comprising forming a first pad on the second surface of the substrate, the first pad being connected to the metal portion.
7. The semiconductor device manufacturing method according to claim 5 , wherein the seed film is formed on the first pad.
8. The semiconductor device manufacturing method according to claim 1 , further comprising a bump that is formed on the metal portion.
9. The semiconductor device manufacturing method according to claim 8 , wherein the bump is formed on the first surface.
10. A semiconductor device manufacturing method comprising:
forming a through-hole surrounded by an insulating film at least at a first surface of a semiconductor substrate, wherein the through-hole penetrates a semiconductor substrate between the first surface and a second surface of the semiconductor substrate and is made such that a dimension of one opening of the through-hole is smaller than a dimension of the other opening of the through-hole, the second surface being opposite to the first surface, the one opening of the through-hole being formed on the first surface, the insulating film having a first side surface perpendicular to the first surface and a second side surface inclined at a predetermined angle of inclination to the first surface, the second side surface being at the one opening of the through-hole; and
forming a metal portion by conformal plating inside the through-hole having the other opening closed, the metal portion involving therein a void that is closed at the one opening of the through-hole.
11. The semiconductor device manufacturing method according to claim 10 , wherein the first side surface and the second side surface are flat surfaces.
12. The semiconductor device manufacturing method according to claim 10 , wherein the forming the through-hole comprises
forming a cylindrical void that penetrates the substrate between the first surface and the second surface,
covering an inner peripheral surface of the cylindrical void with the insulating film, and
processing the insulating film to make the through-hole such that the dimension of the one opening is smaller than the dimension of the other opening.
13. The semiconductor device manufacturing method according to claim 10 , further comprising forming a first pad on the second surface of the substrate, the first pad being connected to the metal portion.
14. The semiconductor device manufacturing method according to claim 10 , further comprising forming a first pad on the second surface of the substrate before forming the through-hole, the first pad being connected to the metal portion.
15. The semiconductor device manufacturing method according to claim 10 , further comprising forming a seed film inside the through-hole,
wherein the metal portion is formed on the seed film.
16. The semiconductor device manufacturing method according to claim 15 , further comprising forming a first pad on the second surface of the substrate, the first pad being connected to the metal portion.
17. The semiconductor device manufacturing method according to claim 15 , wherein the seed film is formed on the first pad.
18. The semiconductor device manufacturing method according to claim 10 , further comprising a bump that is formed on the metal portion.
19. The semiconductor device manufacturing method according to claim 18 , wherein the bump is formed on the first surface.
20. The semiconductor device manufacturing method according to claim 1 , wherein a first thickness of the insulating film at the one opening of the through-hole is larger than a second thickness of the insulating film at the intermediate portion of the through-hole.
21. The semiconductor device manufacturing method according to claim 10 , wherein a first thickness of the insulating film on the second side surface is larger than a second thickness of the insulating film on the first side surface.