According to one embodiment, a memory controller sends a periodic control signal from a first terminal on a non-volatile memory side to the non-volatile memory, and the control signal includes a data strobe signal, a write enable signal, and a read enable signal.
1. A memory device, comprising:
a non-volatile memory chip;
a memory controller chip that controls the non-volatile memory;
a connector that connects the memory controller chip to a host;
a substrate on which the non-volatile memory chip and the memory controller chip are mounted; and
a package sealing the memory controller chip with resin, the package being mounted on the substrate, wherein
the memory controller chip comprises two pads,
the memory controller chip is capable of interactive communications with the host by using a differential transmission signal and a differential reception signal, and
a pair of transmission paths of the differential transmission signal is arranged symmetrically from pads to the connector, the transmission paths including wires, and the substrate has the wires.
2. The memory device according to claim 1 , wherein the transmission paths are arranged adjacent to each other.
3. The memory device according to claim 1 , wherein the transmission paths are equal in length from the pads to the connector.
4. The memory device according to claim 1 , wherein the transmission paths are ensured in pairing property from the pads to the connector.
5. The memory device according to claim 1 , wherein
the non-volatile memory chip is arranged on a first end side of the package, and
the connector is arranged on a second end side opposite to first end side.
6. The memory device according to claim 4 , wherein the transmission paths include a bonding wire, a lead terminal, and a pin in the package.
7. The memory device according to claim 1 , wherein a terminal in the package for the differential transmission signal and the differential reception signal is arranged on the second end side.
8. The memory device according to claim 1 , wherein the non-volatile memory chip is an NAND memory chip.
9. The memory device according to claim 8 , wherein the memory controller chip is a USB controller chip.
10. The memory device according to claim 5 , wherein the package is a QFP package.