Semiconductor memory and method for operating the same

1. A semiconductor memory comprising:

a storage unit suitable for storing a minimum operation interval between row command operations;

a detection unit suitable for detecting whether row command signals inputted for the row command operations are activated at the minimum operation interval;

a latching unit suitable for generating flag signals by latching the row command signals; and

a shifting unit suitable for shifting the flag signals based on the minimum operation interval in response to an output signal of the detection unit, and generating internal row command signals.

2. The semiconductor memory of claim 1 , wherein the row command signals comprise active command signals.

3. The semiconductor memory of claim 2 , wherein the minimum operation interval indicates an interval between an operation of activating a bank and another operation of activating another bank, in response to the active command signals inputted successively.

4. The semiconductor memory of claim further comprising:

a bank control unit suitable for controlling the row command operations of the banks in response to the internal row command signals.

5. A semiconductor memory comprising:

a storage unit suitable for storing a minimum operation interval between a row command operation and a column command operation corresponding to the row command operation;

a detection unit suitable for detecting whether a row command signal inputted for the row command operation and a column command signal inputted for the column command operation are activated at the minimum operation interval;

a latching unit suitable for generating flag signals by latching the row command signal and the column command signal; and

a shifting unit suitable for shifting the flag signals based on the minimum operation interval in response to an output signal of the detection unit, and generating internal command signals.

6. The semiconductor memory of claim 5 , wherein the row command signal is an active command signal, and the column command signal is a read or write command signal.

7. The semiconductor memory of claim 6 , wherein the minimum operation interval indicates an interval between an operation of activating a bank in response to the active command and another operation of reading or writing data from or in an activated bank in response to the read or write command signal.

8. The semiconductor memory of claim 7 , further comprising:

a bank control unit suitable for controlling the row command operation and the column command operation of the bank in response to the internal command signals.

9. A method for operating a semiconductor memory, comprising:

receiving a first command signal and generating a first internal command signal for performing an internal operation corresponding to the first command signal;

comparing an interval between activations of the first command signal and a second command signal to a predetermined activation interval; and

shifting the second command signal based on the predetermined activation interval in response to a result of the comparing, and generating a second internal command signal for performing an internal operation corresponding to the second command signal,

wherein the predetermined activation interval is defined as an interval between activations of the first and second internal command signals.

10. The method of claim 9 , further comprising:

generating flag signals by latching the first and second command signals.

11. The method of claim 9 , wherein the first and second command signals are row command signals.

12. The method of claim 9 , wherein the first command signal is a row command signal, and the second command signal is a column command signal.