Semiconductor device
A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.
1. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element;
a wiring pattern formed along the first surface;
a through hole extending through the semiconductor substrate and reaching a portion of the wiring pattern; and
a through electrode disposed in the through hole and connected to the wiring pattern at the first surface, the through electrode including an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a titanium film disposed along the insulating film and a copper film disposed along a surface of the titanium film, and an electrode layer comprising a nickel film filled inside the through hole over the conductive layer, the conductive layer being softer than the electrode layer, the electrode layer having a melting point higher than a melting point of the conductive layer, and the electrode layer including a void portion enclosed therein and having an end portion disposed near the second surface of the semiconductor substrate.
2. The device according to claim 1 , wherein the conductive layer has a thickness ranging from 3 nm to 200 nm.
3. The device according to claim 1 , further comprising a bump disposed above the through electrode so as to be located in a second surface side of the semiconductor substrate.
4. The device according to claim 1 , wherein the conductive layer has a thickness equal to or greater than 200 nm.
5. The device according to claim 1 , wherein the electrode layer includes a demagnetized layer at least in one side proximal to the conductive layer.
6. The device according to claim 5 , wherein the demagnetized layer of the electrode layer includes at least one nonmagnetic material.
7. The device according to claim 5 , wherein the demagnetized layer of the electrode layer is demagnetized by fine crystallization.
8. The device according to claim 5 , wherein the the demagnetized layer comprises a demagnetized nickel.
9. The device according to claim 8 , wherein the demagnetized nickel includes at least one nonmagnetic material.
10. The device according to claim 9 , wherein the demagnetized nickel includes 5 wt % or more of the nonmagnetic material.
11. The device according to claim 9 , wherein the demagnetized nickel includes 8 wt % or more of the nonmagnetic material.
12. The device according to claim 9 , wherein the at least one nonmagnetic material is one or more materials selected from the group consisting of carbon, phosphorous, boron, aluminum, molybdenum, and tungsten.
13. The device according to claim 8 , wherein the demagnetized layer comprises a demagnetized fine-grain layer.
14. The device according to claim 13 , wherein the demagnetized layer comprises a crystal grain having a crystal grain diameter of 10 nm or less.