Optical semiconductor device
View Patent ↗Phosphate-based glass doped with copper ions having infrared blocking filter characteristics is formed into particles and is mixed with a transparent encapsulating resin to encapsulate a semiconductor element. The glass particles have a particle diameter four times or more as large as a wavelength of infrared radiation to be blocked. An optical semiconductor device can be obtained having a stable filter characteristics thereof even if an incident light angle changes and is resistant to moisture.
1. An optical semiconductor device, comprising:
a resin molded lead frame substrate having a hollow portion formed therein;
an optical semiconductor element mounted on a mounting surface on the resin molded lead frame substrate; and
a transparent encapsulating resin filled in the hollow portion to cover an upper surface and side surfaces of the optical semiconductor element, the transparent encapsulating resin being mixed with phosphate-based glass particles containing copper ions, wherein
the phosphate-based glass particles containing copper ions comprise particles having a particle diameter of 2.8 μm or more, and
the phosphate-based glass particles containing copper ions comprise 25% to 40% in volume fraction of particles having the particle diameter of 2.8 μm or more and less than 6.0 μm and 15% to 30% in volume fraction of particles having the particle diameter of 6.0 μm or more.
2. The optical semiconductor device according to claim 1 , further comprising a cover glass placed on an upper surface of the transparent encapsulating resin.
3. The optical semiconductor device according to claim 1 , wherein the optical semiconductor is wire bonded to inner leads of the resin molded lead frame substrate.
4. The optical semiconductor device according to claim 1 , wherein the transparent encapsulating resin has a refractive index the same as that of the phosphate-based glass.