Technique for controlling temperature uniformity in crystal growth apparatus
View Patent ↗A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.
1. A crystal growth apparatus comprising:
an outer container;
a chamber formed by an outer shell of insulation and a top insulation cover, wherein the chamber is formed within the outer container;
a hot zone within the chamber, the hot zone including a crucible, a heating element disposed between the crucible and the outer shell of insulation, and a heat exchanger positioned beneath the crucible, wherein the crucible has a square or rectangular cross section, and the heating element has a circular cross section; and
a muffle disposed within the hot zone and configured to apply heat uniformly to the crucible, the muffle surrounding at least two sides of the crucible and disposed between the heating element and the at least two sides of the crucible, wherein the muffle has a square or rectangular cross section, the muffle is thicker in each of a plurality of corners thereof than in each of a plurality of sides thereof, and the muffle is oriented such that at least one corner of the plurality of corners of the muffle is positioned between a center of one side of the crucible and the heating element.
2. The crystal growth apparatus of claim 1 , wherein the muffle includes a muffle cover disposed on a top side of the muffle.
3. The crystal growth apparatus of claim 2 , wherein an exit port is formed in the muffle cover which includes a tube that is inserted in a seat disposed in the muffle cover, the tube extending from the seat to an outer surface of the chamber.
4. The crystal growth apparatus of claim 3 , wherein a protective barrier is disposed between the seat and the tube.
5. The crystal growth apparatus of claim 3 , wherein the tube is made of molybdenum or tungsten.
6. The crystal growth apparatus of claim 2 , wherein the muffle cover includes an exit port and is fitted with a tube inserted into a seat disposed in an opening in the muffle cover.
7. The crystal growth apparatus of claim 6 , wherein the tube extends through the top insulation cover.
8. The crystal growth apparatus of claim 7 , wherein a sleeve is formed around a portion of the tube that passes through the top insulation cover.
9. The crystal growth apparatus of claim 7 , wherein the exit port is inside of the outer container.
10. The crystal growth apparatus of claim 1 , wherein the muffle is formed with walls having a tapered thickness.
11. The crystal growth apparatus of claim 1 , wherein the crystal growth apparatus is a sapphire crystal growth apparatus.
12. The crystal growth apparatus of claim 1 , wherein the muffle is positioned closer to the crucible than the heating element.
13. The crystal growth apparatus of claim 1 , wherein the muffle and the crucible form a flat topped boule with a square or rectangular shaped cross section, respectively.
14. The crystal growth apparatus of claim 1 , wherein a vacuum environment is formed within the heat zone.