Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion
View Patent ↗Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.
1. A solar cell, comprising:
a substrate having a light-receiving surface and a back surface;
a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate;
a first conductive contact structure electrically connected to the first polycrystalline silicon emitter region; and
a second polycrystalline silicon emitter region of a second, different conductivity type disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate, wherein each of the non-continuous trenches has a texturized surface, wherein the second thin dielectric layer is confined to the plurality of non-continuous trenches and is conformal with the texturized surface of the plurality of non-continuous trenches, wherein the second thin dielectric layer is physically separated from the first conductive contact structure, and wherein the first polycrystalline silicon emitter region is laterally adjacent to the second polycrystalline silicon emitter region and is electrically isolated from the second polycrystalline silicon emitter region by a third thin dielectric layer, the third thin dielectric layer non-continuous with the second thin dielectric layer disposed in the plurality of non-continuous trenches in the back surface of the substrate, wherein the third thin dielectric layer has a vertical thickness and a lateral thickness, and the vertical thickness is greater than the lateral thickness, and wherein an uppermost surface of the third thin dielectric and an uppermost surface of the first polycrystalline silicon emitter region are co-planar.
2. The solar cell of claim 1 , wherein each of the plurality of non-continuous trenches has a width approximately in the range of 30-60 microns, and wherein successive ones of the plurality of non-continuous trenches are spaced apart at a distance approximately in the range of 50-300 microns.
3. The solar cell of claim 2 , wherein each of the plurality of non-continuous trenches has a depth approximately in the range of 0.5-10 microns from the back surface and into the substrate.
4. The solar cell of claim 1 , wherein each of the non-continuous trenches has an approximately circular shape.
5. The solar cell of claim 1 , further comprising:
a second conductive contact structure electrically connected to the second polycrystalline silicon emitter region.
6. The solar cell of claim 1 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region; and
a polycrystalline silicon layer of the second conductivity type disposed on the insulator layer, wherein the first conductive contact structure is disposed through the polycrystalline silicon layer of the second conductivity type and through the insulator layer.
7. The solar cell of claim 1 , wherein the substrate is an N-type monocrystalline silicon substrate, the first conductivity type is P-type, and the second conductivity type is N-type, and wherein the solar cell is a back contact solar cell.
8. A solar cell, comprising:
a substrate having a light-receiving surface and a back surface;
a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate;
a first conductive contact structure electrically connected to the first polycrystalline silicon emitter region; and
a second polycrystalline silicon emitter region of a second, different conductivity type disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate, wherein the second polycrystalline silicon emitter region is physically isolated from the first conductive contact structure by an isolating trench disposed through the second polycrystalline silicon emitter region on both sides of the first conductive contact structure, and wherein the first polycrystalline silicon emitter region is laterally adjacent to the second polycrystalline silicon emitter region and is electrically isolated from the second polycrystalline silicon emitter region by a third thin dielectric layer, the third thin dielectric layer non-continuous with the second thin dielectric layer disposed in the plurality of non-continuous trenches in the back surface of the substrate, wherein the third thin dielectric layer has a vertical thickness and a lateral thickness, and the vertical thickness is greater than the lateral thickness, and wherein an uppermost surface of the third thin dielectric and an uppermost surface of the first polycrystalline silicon emitter region are co-planar.
9. The solar cell of claim 8 , wherein each of the plurality of non-continuous trenches has a width approximately in the range of 30-60 microns, and wherein successive ones of the plurality of non-continuous trenches are spaced apart at a distance approximately in the range of 50-300 microns.
10. The solar cell of claim 9 , wherein each of the plurality of non-continuous trenches has a depth approximately in the range of 0.5-10 microns from the back surface and into the substrate.
11. The solar cell of claim 8 , wherein each of the non-continuous trenches has an approximately circular shape.
12. The solar cell of claim 8 , wherein each of the non-continuous trenches has a texturized surface.
13. The solar cell of claim 8 , further comprising:
a second conductive contact structure electrically connected to the second polycrystalline silicon emitter region.
14. The solar cell of claim 8 , further comprising:
an insulator layer disposed on the first polycrystalline silicon emitter region, wherein the first conductive contact structure is disposed through the insulator layer.
15. The solar cell of claim 8 , wherein the substrate is an N-type monocrystalline silicon substrate, the first conductivity type is P-type, and the second conductivity type is N-type, and wherein the solar cell is a back contact solar cell.