Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode
A light emitting device is provided with a growing base having specific geometry to prevent delamination between the encapsulant and the growing base, and thereby enhance structural reliability of the light emitting device. Furthermore, the light emitting efficiency as well as uniformity of light output of the light emitting device can be improved by forming the side surface of the growing base with at least a curved portion or slanted portion, and uneven structures can be formed on the curved portion or slanted portion to further improve the uniformity of light output. Furthermore, the light emitting diode chips can be fabricated by taking batch processing on the growing substrate, as provided in the wafer-level structure, with the advantages of saving cost, improving yield, etc.
1. A light emitting device, comprising:
a light emitting diode (LED) chip, comprising:
an LED structure layer, having a first surface and a second surface opposite to the first surface;
two electrodes, disposed on the first surface;
a growing base, comprising a third surface facing the LED structure layer, a fourth surface opposite to the third surface and a side surface connected between the third surface and the fourth surface; and
a reflective layer, covering a portion of the first surface of the LED structure layer, and wherein the reflective layer is insulated from the two electrodes by gaps between the reflective layer and the two electrodes, wherein the area of the fourth surface is larger than the area of the third surface, and at least a portion of the side surface of the growing base is curved; and
an encapsulant, covering the fourth surface of the growing base and exposing the two electrodes, wherein the encapsulant exposes the first surface of the LED structure layer, and the encapsulant has a fifth surface substantially coplanar with the first surface.
2. The light emitting device according to claim 1 , wherein the growing base is translucent and disposed on the second surface of the LED structure layer.
3. The light emitting device according to claim 2 , wherein a first portion of the side surface adjacent to the third surface is slanted, and a second portion of the side surface connected between the first portion and the fourth surface is flat and substantially perpendicular to the fourth surface.
4. The light emitting device according to claim 2 , wherein the growing base further comprises uneven structures on the slanted portion of the side surface.
5. The light emitting device according to claim 1 , wherein the reflective layer covers the fifth surface of the encapsulant.
6. The light emitting device according to claim 1 , wherein the encapsulant comprises phosphors.
7. The light emitting device according to claim 1 , wherein a first portion of the side surface adjacent to the third surface is curved, and a second portion of the side surface connected between the first portion and the fourth surface is flat and substantially perpendicular to the fourth surface.
8. The light emitting device according to claim 1 , wherein the growing base further comprises uneven structures on the curved portion of the side surface.
9. The light emitting device according to claim 1 , wherein the end surfaces of the two electrodes are substantially coplanar with each other.