FABRICATION METHODS FOR BACK CONTACT SOLAR CELLS

1 . A method for forming a back contact back junction solar cell, comprising:

depositing at least a base dopant source and an emitter dopant source on the back surface of a solar cell substrate;

annealing said solar cell substrate forming doped emitter regions corresponding to said emitter dopant source and doped base regions corresponding to said base dopant source;

etching said base dopant source and said emitter dopant source;

depositing a backside passivation layer on said back surface of said solar cell;

opening contacts to said doped emitter regions and said doped base regions through said backside passivation layer; and

forming patterned base metallization and patterned emitter metallization on said back surface of said solar cell with electrical interconnections to said contacts to said base regions and said emitter regions.

2 . The method for forming a back contact back junction solar cell of claim 1 , further comprising:

forming (laminating or depositing) an electrically insulating dielectric backplane covering said patterned base metallization and said patterned emitter metallization; and

forming a second patterned emitter metallization and second patterned base metallization contacting said patterned emitter metallization and said patterned base metallization through vias in said electrically insulating dielectric backplane.

3 . The method for forming a back contact back junction solar cell of claim 2 , further comprising forming a frontside passivation layer on the front surface of said solar cell substrate.

4 . The method for forming a back contact back junction solar cell of claim 3 , wherein said frontside passivation comprises aluminum oxide.

5 . The method for forming a back contact back junction solar cell of claim 4 , further comprising a silicon nitride anti-reflection layer wherein said aluminum oxide frontside passivation is formed using an Atomic Layer Deposition (ALD) process and said silicon nitride is formed using a Plasma-Enhanced Chemical-Vapor Deposition (PECVD) process.

6 . The method for forming a back contact back junction solar cell of claim 4 , further comprising a silicon nitride anti-reflection layer wherein said aluminum oxide frontside passivation and said silicon nitride are formed using a Plasma-Enhanced Chemical-Vapor Deposition (PECVD) process.

7 . The method for forming a back contact back junction solar cell of claim 1 , wherein said backside passivation layer comprises aluminum oxide.

8 . The method for forming a back contact back junction solar cell of claim 1 , wherein said backside passivation layer comprises a bilayer of aluminum oxide and silicon oxide.

9 . The method for forming a back contact back junction solar cell of claim 7 , wherein said backside aluminum oxide passivation layer is deposited using an Atomic-Layer Deposition (ALD) process.

10 . The method for forming a back contact back junction solar cell of claim 7 , wherein said backside aluminum oxide passivation layer is deposited using a PECVD process.

11 . The method for forming a back contact back junction solar cell of claim 7 , wherein said backside aluminum oxide passivation layer is deposited using an Atmospheric-Pressure Chemical-vapor Deposition (APCVD) process.

12 . The method for forming a back contact back junction solar cell of claim 1 , wherein opening contacts to said emitter regions and said base regions through said backside passivation layer is performed using pulsed laser ablation.

13 . A method for forming a back contact back junction solar cell, comprising:

printing a first patterned field emitter paste on the back surface of a solar cell substrate, said patterned field emitter paste having a doping polarity opposite said solar cell substrate doping polarity;

printing a second patterned emitter paste on said back surface of said solar cell substrate, said patterned emitter paste having a doping polarity opposite said solar cell substrate;

forming a patterned base paste on said back surface of said solar cell substrate, said patterned base paste having a doping polarity the same as said solar cell substrate doping polarity;

annealing said solar cell substrate, concurrently forming field emitter regions corresponding to said second patterned field emitter paste, emitter contact regions corresponding to said first patterned emitter paste and base contact regions corresponding to said patterned base paste;

etching said first patterned field emitter paste, said second patterned emitter paste, and said patterned base paste;

depositing a backside passivation layer on said back surface of said solar cell;

opening contacts to said emitter contact regions and said base contact regions through said backside passivation layer; and

forming patterned base metallization and patterned emitter metallization making electrical interconnections to said contacts to said base regions and said emitter regions.

14 . The method for forming a back contact back junction solar cell of claim 13 , wherein said first field emitter paste, said second emitter paste, and said base paste are silicon nanoparticle pastes.

15 . A method for forming a back contact back junction solar cell, comprising;

printing a patterned emitter contact paste on a back surface of a solar cell substrate, said patterned emitter contact paste having a doping polarity opposite said solar cell substrate doping polarity;

forming a patterned base contact paste on said back surface of said solar cell substrate, said patterned base contact paste having a doping polarity the same as said solar cell substrate doping polarity;

depositing a field emitter doped oxide covering said back surface of said solar cell substrate, said patterned emitter paste, and said patterned base paste, said field emitter doped oxide having a doping polarity opposite said solar cell substrate doping polarity;

annealing said solar cell substrate concurrently forming field emitter regions corresponding to said field emitter doped oxide, emitter contact regions corresponding to said patterned emitter paste and base contact regions corresponding to said patterned base paste;

etching said field emitter doped oxide, said patterned emitter contact paste, and said patterned base contact paste;

depositing a backside passivation layer on said back surface of said solar cell;

opening contacts to said emitter contact regions and said base contact regions through said backside passivation layer; and

forming patterned base metallization and patterned emitter metallization with electrical interconnections to said contacts to said base regions and said emitter regions.

16 . The method for forming a back contact back junction solar cell of claim 15 , wherein said field emitter paste, said emitter contact paste, and said base contact paste are silicon nanoparticle pastes.

17 . The method for forming a back contact back junction solar cell of claim 15 , wherein said field emitter doped oxide is deposited using an APCVD process.

18 . The method for forming a back contact back junction solar cell of claim 15 , wherein said field emitter doped oxide comprises aluminum oxide.

19 . The method for forming a back contact back junction solar cell of claim 15 , wherein said field emitter doped oxide comprises boron-doped silicon oxide.

20 - 26 . (canceled)