IP Library Granted Patent US 9,331,216
Granted Patent B2
US 9,331,216 · App. 14/493,346 · Granted May 3, 2016

Core-shell nickel alloy composite particle metallization layers for silicon solar cells

Inventors: Brian E. Hardin (Berkeley, CA); Stephen T. Connor (San Francisco, CA); James Randy Groves (Sunnyvale, CA); Craig H. Peters (Oakland, CA)
Assignee: PLANT PV, Inc.
H01L31/022425H01B1/20H01L31/0512
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Quick Facts
Patent No.
US 9,331,216
App. No.
14/493,346
Granted
May 3, 2016
Kind
B2
Abstract

Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Claims (50)

1. A solar cell comprising:

a silicon substrate having a front surface and a back surface;

a plurality of fine grid lines on the front surface of the silicon substrate;

at least one front busbar layer on the front side of the silicon substrate, the front busbar layers in electrical contact with the plurality of fine grid lines;

an aluminum layer on the back side of the silicon substrate; and

at least one rear tabbing layer on the back side of the silicon substrate;

wherein at least one of the plurality of fine grid lines, the front busbar layer, or the rear tabbing layer comprises:

a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology, such that the weight ratio of silver to core-shell nickel particles is between 1:9 and 4:1;

wherein the core-shell nickel particles comprise:

a nickel core; and

a first shell surrounding the core, the first shell consisting of a nickel alloy with 1-8 wt % boron.

2. The solar cell of claim 1 , wherein the rear tabbing layer comprises a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and has a peel strength of more than 1 N/mm when soldered to tin coated copper tabbing ribbons using tin based solders and fluxes.

3. The solar cell of claim 2 , wherein the rear tabbing layer has a thickness between 4 and 15 μm.

4. The solar cell of claim 2 , wherein the rear tabbing layer has a conductivity that is 2 to 10 times less than the conductivity of bulk silver.

5. The solar cell of claim 1 , wherein the front busbar layer comprises a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and has a peel strength of more than 1 N/mm when soldered to tin coated copper tabbing ribbons using tin based solders and fluxes.

6. The solar cell of claim 5 , wherein the front busbar layer has a thickness between 4 μm and 50 μm.

7. The solar cell of claim 5 , wherein the front busbar layer has a conductivity that is 2 to 10 times less than the conductivity of bulk silver.

8. The solar cell of claim 5 , wherein the front surface of the silicon substrate has an anti-reflective coating, and the front busbar layer does not penetrate through the anti-reflective coating and does not make electrical contact to the silicon substrate.

9. The solar cell of claim 5 , wherein the front surface of the silicon substrate has a silicon emitter layer, and the front busbar layer makes electrical contact to the silicon emitter layer.

10. The solar cell of claim 5 wherein there is more than one front busbar layer, the front busbar layers are parallel to one another, and the distance between the front busbar layers is less than 4 cm.

11. The solar cell of claim 1 , wherein the fine grid lines comprise a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and have thicknesses between 20 μm and 50 μm.

12. The solar cell of claim 11 , wherein the fine grid lines have a conductivity that is 1.5 to 7 times less than the conductivity of bulk silver.

13. The solar cell of claim 11 , wherein the front surface of the silicon substrate has a silicon emitter layer, and the fine grid lines make electrical contact to the silicon emitter layer with a contact resistance less than 100 mohm-cm 2 .

14. The solar cell of claim 11 , wherein the fine grid lines further comprise an additional metal layer between the sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and the silicon substrate and wherein the additional metal layer consists of silver.

15. The solar cell of claim 11 , wherein the fine grid lines further comprise an additional metal layer over the sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and wherein the additional metal layer consists of silver.

16. A solar cell comprising:

a silicon substrate having a front surface and a back surface;

a plurality of fine grid lines on the front surface of the silicon substrate;

at least one front busbar layer on the front surface of the silicon substrate, the front busbar layers in electrical contact with the plurality of fine grid lines;

an aluminum layer on a back surface of the silicon substrate; and

at least one rear tabbing layer on the back surface of the silicon substrate;

wherein at least one of the plurality of fine grid lines, the front busbar, or the rear tabbing layer comprises:

a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology, such that the weight ratio of silver to core-shell nickel alloy particles is between 1:9 and 4:1;

wherein the core-shell nickel alloy particles comprise:

a nickel or nickel alloy core; and

a first shell surrounding the core, the first shell made of a material different from the core, the first shell comprising one or more materials selected from the group consisting of tin (Sn), zinc (Zn), lead (Pb), nickel alloy, and combinations thereof.

17. The solar cell of claim 16 , wherein the rear tabbing layer comprises a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and has a thickness between 4 and 15 μm.

18. The solar cell of claim 17 , wherein the rear tabbing layer has a peel strength of more than 1 N/mm when soldered to tin coated copper tabbing ribbons using tin based solders and fluxes.

19. The solar cell of claim 17 , wherein the rear tabbing layer has a conductivity that is 2 to 10 times less than the conductivity of bulk silver.

20. The solar cell of claim 16 , wherein the front busbar layer comprises a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and has a thickness between 4 μm and 50 μm.

21. The solar cell of claim 20 , wherein the front busbar layer has a peel strength of more than 1 N/mm when soldered to tin coated copper tabbing ribbons using tin based solders and fluxes.

22. The solar cell of claim 20 , wherein the front busbar layer has a conductivity that is 2 to 10 times less than the conductivity of bulk silver.

23. The solar cell of claim 20 , wherein the front surface of the silicon substrate has an anti-reflective coating, and the front busbar layer does not penetrate through the anti-reflective coating and does not make electrical contact to the silicon substrate.

24. The solar cell of claim 20 , wherein the front surface of the silicon substrate has a silicon emitter layer, and the front busbar layer makes electrical contact to the silicon emitter layer.

25. The solar cell of claim 20 wherein there is more than one front busbar layer, the front busbar layers are parallel to one another, and the distance between the front busbar layers is less than 4 cm.

26. The solar cell of claim 16 , wherein the fine grid lines comprise a sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and have a conductivity that is 1.5 to 7 times less than bulk silver.

27. The solar cell of claim 26 , wherein the fine grid lines have a thickness between 20 μm and 50 μm.

28. The solar cell of claim 26 , wherein the front surface of the silicon substrate has a silicon emitter layer, and the fine grid lines make electrical contact to the silicon emitter layer with a contact resistance less than 100 mohm-cm 2 .

29. The solar cell of claim 26 , wherein the fine grid lines further comprise an additional metal layer between the sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and the silicon substrate and wherein the additional metal layer consists of silver.

30. The solar cell of claim 26 , wherein the fine grid lines further comprise an additional metal layer over the sintered and compacted silver matrix that contains core-shell nickel particles in a condensed particle morphology and wherein the additional metal layer consists of silver.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2019
From: PLANT PV, INC.
To: HITACHI CHEMICAL CO., LTD.
Reel/Frame 048243/0867 →
CONFIRMATORY LICENSE Recorded Jul 27, 2017
From: PLANT PV, INCORPORATED
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 043350/0435 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 8, 2014
From: CONNOR, STEPHEN T; GROVES, JAMES RANDY; PETERS, CRAIG H; HARDIN, BRIAN
To: PLANT PV
Reel/Frame 034429/0521 →
Continuity (5)
Provisional Application 62011496 · Jun 12, 2014
Provisional Application 61986025 · Apr 29, 2014
Provisional Application 61881394 · Sep 23, 2013
Provisional Application 61986020 · Apr 29, 2014
Related Publication 20150083213A1 · Mar 26, 2015