Semiconductor light-emitting device and fabricating method thereof
View Patent ↗A semiconductor light-emitting device including a light-emitting semiconductor structure, a transparent dielectric pattern and an electrode pattern is provided. The light-emitting semiconductor structure includes a first semiconductor layer, a second semiconductor layer disposed opposite to the first semiconductor layer and a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer. The transparent dielectric pattern is disposed above at least one portion of the light-emitting semiconductor structure. The electrode pattern is disposed above the transparent dielectric pattern. At least one cave is formed between the transparent dielectric pattern and the light-emitting semiconductor structure. The cave is disposed opposite to the electrode pattern. Moreover, a fabricating method of the semiconductor light-emitting device is also provided.
1. A semiconductor light-emitting device, including:
a light-emitting semiconductor structure, including:
a first semiconductor layer;
a second semiconductor layer, disposed opposite to the first semiconductor layer; and
a light-emitting layer, disposed between the first semiconductor layer and the second semiconductor layer;
a transparent dielectric pattern, disposed above the light-emitting semiconductor structure; and
an electrode pattern, disposed above the transparent dielectric pattern, wherein a cave is formed between the transparent dielectric pattern and the light-emitting semiconductor structure, and is located opposite to the electrode pattern, wherein a transverse section width of the cave is not less than a corresponding transverse section width of the electrode pattern.
2. The semiconductor light-emitting device of claim 1 , further including a transparent conductive layer disposed between the transparent dielectric pattern and the electrode pattern, wherein the transparent conductive layer covers the transparent dielectric pattern, the cave and the light-emitting semiconductor structure.
3. The semiconductor light-emitting device of claim 2 , wherein the cave is structured by a top cover portion formed by the transparent dielectric pattern, a side wall portion formed by the transparent dielectric pattern, and the light-emitting semiconductor structure.
4. The semiconductor light-emitting device of claim 3 , wherein the cave includes an opening, and an opening direction of the opening is intersected with a direction perpendicular to the light-emitting layer.
5. The semiconductor light-emitting device of claim 2 , wherein the cave includes an opening, and an opening direction of the opening is intersected with a direction perpendicular to the light-emitting layer.
6. The semiconductor light-emitting device of claim 1 , wherein the cave is structured by a top cover portion formed by the transparent dielectric pattern, a side wall portion formed by the transparent dielectric pattern, and the light-emitting semiconductor structure.
7. The semiconductor light-emitting device of claim 6 , wherein the cave includes an opening, and an opening direction of the opening is intersected with a direction perpendicular to the light-emitting layer.
8. The semiconductor light-emitting device of claim 1 , wherein the cave includes an opening, and an opening direction of the opening is intersected with a direction perpendicular to the light-emitting layer.
9. A semiconductor light-emitting device, including:
a light-emitting semiconductor structure, including:
a first semiconductor layer;
a second semiconductor layer, disposed opposite to the first semiconductor layer; and
a light-emitting layer, disposed between the first semiconductor layer and the second semiconductor layer;
a transparent dielectric pattern, disposed above the light-emitting semiconductor structure; and
an electrode pattern, disposed above the transparent dielectric pattern, wherein a plurality of caves is formed between the transparent dielectric pattern and the light-emitting semiconductor structure, and is located opposite to the electrode pattern, wherein the caves are arranged in equidistant interval or non-equidistant interval.
10. The semiconductor light-emitting device of claim 9 , wherein each of the caves is structured by a top cover portion formed by the transparent dielectric pattern, a side wall portion formed by the transparent dielectric pattern, and the light-emitting semiconductor structure.
11. The semiconductor light-emitting device of claim 10 , wherein each of the caves includes an opening, and an opening direction of the opening is intersected with a direction perpendicular to the light-emitting layer.
12. The semiconductor light-emitting device of claim 11 , further including a transparent conductive layer disposed between the transparent dielectric pattern and the electrode pattern, wherein the transparent conductive layer covers the transparent dielectric pattern, the caves and the light-emitting semiconductor structure.
13. The semiconductor light-emitting device of claim 10 , further including a transparent conductive layer disposed between the transparent dielectric pattern and the electrode pattern, wherein the transparent conductive layer covers the transparent dielectric pattern, the caves and the light-emitting semiconductor structure.
14. The semiconductor light-emitting device of claim 9 , wherein each of the caves includes an opening, and an opening direction of the opening is intersected with a direction perpendicular to the light-emitting layer.
15. The semiconductor light-emitting device of claim 14 , further including a transparent conductive layer disposed between the transparent dielectric pattern and the electrode pattern, wherein the transparent conductive layer covers the transparent dielectric pattern, the caves and the light-emitting semiconductor structure.
16. The semiconductor light-emitting device of claim 9 , further including a transparent conductive layer disposed between the transparent dielectric pattern and the electrode pattern, wherein the transparent conductive layer covers the transparent dielectric pattern, the caves and the light-emitting semiconductor structure.
17. A semiconductor light-emitting device, including:
a light-emitting semiconductor structure, including:
a first semiconductor layer;
a second semiconductor layer, disposed opposite to the first semiconductor layer; and
a light-emitting layer, disposed between the first semiconductor layer and the second semiconductor layer;
a first transparent dielectric pattern, disposed above the first semiconductor layer;
a second transparent dielectric pattern, disposed above the second semiconductor layer;
a first electrode, disposed above the first transparent dielectric pattern; and
a second electrode, disposed above the second transparent dielectric pattern and distinct from the first electrode, wherein a first cave located opposite to the first electrode is formed between the first transparent dielectric patterns and the light-emitting semiconductor structure, and a second cave located opposite to the second electrode is formed between the second transparent dielectric pattern and the light-emitting semiconductor structure.
18. The semiconductor light-emitting device of claim 17 , further including a transparent conductive layer disposed between the first transparent dielectric pattern and the first electrode, wherein the transparent conductive layer covers the first transparent dielectric pattern and the first semiconductor layer.
19. The semiconductor light-emitting device of claim 17 , wherein an opening direction of the first cave is perpendicular to an extended tangent direction of a corresponding portion of the first electrode.
20. The semiconductor light-emitting device of claim 17 , wherein an opening direction of the second cave is parallel to an extended tangent direction of a corresponding portion of the second electrode.