Vertical structure LEDs

1. A light-emitting device, comprising:

a metal support structure;

a GaN-based semiconductor structure on the metal support structure, the GaN-based semiconductor structure including a p-type GaN semiconductor layer, a GaN active layer, and an n-type GaN semiconductor layer,

wherein the GaN-based semiconductor structure includes a first surface, and a side surface, and a second surface,

wherein the first surface, relative to the second surface, is proximate to the metal support structure,

wherein the second surface is opposite to the first surface, and

wherein a thickness of the metal support structure is 10 times thicker than the GaN-based semiconductor structure;

a p-type electrode on the metal support structure;

an n-type electrode on the second surface of the GaN-based semiconductor structure; and

a passivation layer on the first surface, the side surface, and the second surface of the GaN-based semiconductor structure.

2. The device according to claim 1 , wherein a thickness of the GaN-based semiconductor structure is less than or equal to 100 times a thickness of the p-type layer.

3. The device according to claim 1 , wherein a thickness of the GaN-based semiconductor structure is less than or equal to 5 times a thickness of the n-type layer.

4. The device according to claim 1 , wherein a thickness of the GaN-based semiconductor structure is less than or equal to 1.7 times a thickness of the n-type layer.

5. The device according to claim 1 , wherein the metal support structure comprises Cu.

6. The device according to claim 1 , wherein the GaN-based semiconductor structure is less than about 5 microns thick.

7. The device according to claim 1 , wherein the passivation layer covers a side surface and an upper surface of the n-type electrode.

8. The device according to claim 7 , wherein the passivation layer covering the side surface of the n-type electrode is larger than the passivation layer covering the upper surface of the n-type electrode.

9. The device according to claim 7 , further comprising a metal pad on the passivation layer covering the upper surface of the n-type electrode.

10. A light-emitting device, comprising:

a conductive support structure;

a semiconductor structure on the conductive support structure, the semiconductor structure including a p-type semiconductor layer, an active layer, and an n-type semiconductor layer,

wherein the semiconductor structure includes a first surface, a side surface, and a second surface,

wherein the first surface, relative to the second surface, is proximate to the conductive support structure,

wherein the second surface is opposite to the first surface, and

wherein a thickness of the conductive support structure is 10 times thicker than the semiconductor structure;

a p-type electrode on the conductive support structure;

an n-type electrode on the second surface of the semiconductor structure; and

a passivation layer on the first surface, the side surface, and the second surface of the semiconductor structure, wherein the passivation layer covers a side surface and an upper surface of the n-type electrode.

11. The device according to claim 10 , wherein a thickness of the semiconductor structure is less than or equal to 100 times a thickness of the p-type layer.

12. The device according to claim 10 , wherein a thickness of the semiconductor structure is less than or equal to 5 times a thickness of the n-type layer.

13. The device according to claim 10 , wherein a thickness of the semiconductor structure is less than or equal to 1.7 times a thickness of the n-type layer.

14. The device according to claim 10 , further comprising a metal pad on the passivation layer covering the upper surface of the n-type electrode.

15. A light-emitting device, comprising:

a support structure;

a semiconductor structure on the support structure, the semiconductor structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer,

wherein the semiconductor structure includes a first surface, a side surface, and a second surface,

wherein the first surface, relative to the second surface, is proximate to the support structure, wherein the second surface is opposite to the first surface, and

wherein a thickness of the support structure is 10 times thicker than of the semiconductor structure;

a first-type electrode on the support structure;

a second-type electrode on the second surface of the semiconductor structure; and

a passivation layer on the first surface, the side surface, and the second surface of the semiconductor structure,

wherein the passivation layer covers a side surface and an upper surface of the second-type electrode.

16. The device according to claim 15 , wherein a thickness of the semiconductor structure is 100 times or less than a thickness of the first-type layer.

17. The device according to claim 15 , wherein a thickness of the semiconductor structure is 5 times or less than a thickness of the second-type layer.

18. The device according to claim 15 , wherein a thickness of the semiconductor structure is 1.7 times or less than a thickness of the second-type layer.

19. The device according to claim 15 further comprising a metal pad disposed on the passivation layer covering the upper surface of the second-type electrode.

20. The device according to claim 19 , wherein the metal pad contacts the passivation layer covering the upper surface of the second-type electrode.