Light emitting device

1. A light emitting device comprising:

a substrate;

a first buffer layer on the substrate;

a first insulating layer on the first buffer layer;

a second buffer layer on the first insulating layer;

a second insulating layer on the second buffer layer;

a third buffer layer around the second buffer layer and the second insulating layer; and

a light emitting structure on the third buffer layer.

2. The light emitting device of claim 1 , wherein a side surface of the second buffer layer is disposed inwardly of side surfaces of the first and second insulating layers to expose a lower edge of the second insulating layer and an upper edge of the first insulating layer.

3. The light emitting device of claim 2 , wherein the side surfaces of the first and second insulating layers are disposed on a same vertical line.

4. The light emitting device of claim 3 , wherein the third buffer layer extends horizontally to cover a lower edge of the second insulating layer and an upper edge of the first insulating layer.

5. The light emitting device of claim 1 , wherein a thickness of the second buffer layer is thicker than thicknesses of the first and second insulating layers.

6. The light emitting device of claim 5 , wherein the thickness of the second buffer layer is in a range of 4,500 Å to 5,500 Å.

7. The light emitting device of claim 1 , wherein a lattice constant of the third buffer layer is less than a lattice constant of the second buffer layer.

8. The light emitting device of claim 1 , wherein the first to third buffer layers include a group III-V compound semiconductor or a group II-VI compound semiconductor.

9. The light emitting device of claim 8 , wherein the first buffer layer includes AIN or Al 2 O 3 .

10. The light emitting device of claim 8 , wherein the second buffer layer includes ZnO.

11. The light emitting device of claim 8 , wherein the third buffer layer includes GaN.

12. The light emitting device of claim 1 , wherein the first and second insulating layers include SiO 2 or SiNx.

13. The light emitting device of claim 1 , wherein the third buffer layer does not make contact with the substrate.

14. The light emitting device of claim 1 , wherein the light emitting structure includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

15. A light emitting device comprising:

a substrate;

a first buffer layer provided on the substrate in a form of a plurality of patterns;

a first insulating layer on the patterns of the first buffer layer;

a second buffer layer on a pattern of the first insulating layer;

a second insulating layer on a pattern of the second buffer layer;

a third buffer layer around the patterns of the second buffer layer and the second insulating layer; and

a light emitting structure on the third buffer layer,

wherein a distance between the patterns of the second buffer layer is longer than a distance between the patterns of the second insulating layer.

16. The light emitting device of claim 15 , wherein a side surface of the second buffer layer is disposed inwardly of a side surface of the second insulating layer.

17. The light emitting device of claim 15 , wherein the third buffer layer is aligned to cover a lower edge of the second insulating layer.

18. The light emitting device of claim 15 , wherein the third buffer layer is aligned to cover an upper edge of the first insulating layer.

19. The light emitting device of claim 18 , wherein a lower region of the third buffer layer is disposed horizontally with the first insulating layer.

20. The light emitting device of claim 15 , wherein a thickness of the second buffer layer is thicker than thicknesses of the first and second insulating layers.