IP Library Granted Patent US 9,559,083
Granted Patent B2
US 9,559,083 · App. 14/499,174 · Granted Jan 31, 2017

Semiconductor light-emitting device

Inventor: Takashi Iino (Yamanashi, JP)
Assignees: CITIZEN ELECTRONICS CO., LTD.; CITIZEN HOLDINGS CO., LTD.
H01L25/0753F21K9/232F21V3/0436F21Y2101/00H01L33/504H01L33/507H01L33/62H01L2924/0002
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Quick Facts
Patent No.
US 9,559,083
App. No.
14/499,174
Granted
Jan 31, 2017
Kind
B2
Abstract

Provided is a compact and high-luminance semiconductor light-emitting device which has excellent color rendering characteristics and which enables arbitrary selection of emission color depending on the use of the device. The semiconductor light-emitting device includes a light-emitting element assembly configured by a plurality of fluorescent semiconductor light-emitting elements each of which has external connection electrodes respectively connected to an n-type semiconductor layer and a p-type semiconductor layer, wherein at least an outer surface other than the external connection electrodes of each of the fluorescent semiconductor light-emitting elements is coated with a resin containing a fluorescent material. The light-emitting element assembly is configured such that the external connection electrodes of the fluorescent semiconductor light-emitting elements are directly connected in series using solder.

Claims (15)

1. A semiconductor light-emitting device comprising:

a metal plate;

an insulating substrate which has conduction patterns formed thereon and a through hole, the insulating substrate being laminated on the metal plate; and

a light-emitting element assembly disposed within the through hole and configured by a plurality of fluorescent semiconductor light-emitting elements each of which has external connection electrodes respectively connected to an n-type semiconductor layer and a p-type semiconductor layer, wherein at least an outer surface other than the external connection electrodes of each of the fluorescent semiconductor light-emitting elements is coated with a resin containing a fluorescent material,

wherein the light-emitting element assembly is configured such that the external connection electrodes of the fluorescent semiconductor light-emitting elements are directly connected in series using solder,

in the light-emitting element assembly, the external connection electrodes of neighboring fluorescent semiconductor light-emitting elements are faced toward one another and connected, and thereby the neighboring fluorescent semiconductor light-emitting elements overlap in a depthwise direction, and the plurality of fluorescent semiconductor light-emitting elements are disposed separately into an upper layer and a lower layer,

the fluorescent semiconductor light-emitting elements of the lower layer are in close contact with the metal plate exposed by the through hole,

the fluorescent semiconductor light-emitting elements on ends of the light-emitting element assembly are disposed on the upper layer, and

the external connection electrodes of the fluorescent semiconductor light-emitting elements on the ends are electrically connected to the conduction patterns, and thereby a driving voltage is supplied to the light-emitting element assembly.

2. The semiconductor light-emitting device according to claim 1 , wherein, in the light-emitting element assembly, neighboring fluorescent semiconductor light-emitting elements are connected in a straight-line direction or a perpendicular direction.

3. The semiconductor light-emitting device according to claim 1 , comprising two or more light-emitting element assemblies, wherein the light-emitting element assemblies are connected in parallel.

4. The semiconductor light-emitting device according to claim 1 , wherein the fluorescent material of the fluorescent semiconductor light-emitting elements of the upper layer and the fluorescent material of the fluorescent semiconductor light-emitting elements of the lower layer differ from each other.

5. The semiconductor light-emitting device according to claim 4 , wherein the fluorescent material of the fluorescent semiconductor light-emitting elements of the upper layer is a green fluorescent material, and the fluorescent material of the fluorescent semiconductor light-emitting elements of the lower layer is a red fluorescent material.

6. The semiconductor light-emitting device according to claim 1 , further comprising a sealing material which is made of resin containing a diffusing agent, the sealing material sealing the light-emitting element assembly.

7. The semiconductor light-emitting device according to claim 1 , further comprising a sealing material which is made of resin containing a fluorescent material, the sealing material sealing the light-emitting element assembly.

Assignments (2)
CHANGE OF NAME Recorded Mar 6, 2017
From: CITIZEN HOLDINGS CO., LTD.
To: CITIZEN WATCH CO., LTD.
Reel/Frame 041895/0640 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 27, 2014
From: IINO, TAKASHI
To: CITIZEN ELECTRONICS CO., LTD.; CITIZEN HOLDINGS CO., LTD.
Reel/Frame 033834/0363 →
Priority Claims (1)
JP 2013-206057 · Oct 1, 2013 · national
Continuity (1)
Related Publication 20150129907A1 · May 14, 2015