Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
View Patent ↗A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10 −4 rlu or less.
1. A gallium nitride single-crystal substrate having a thickness of 0.2 mm or more and comprising a gallium nitride crystal grown on a non-polar or semi-polar plane of a gallium nitride,
wherein, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of a (100) plane of the gallium nitride crystal, a Qx width at 1/300th of peak intensity is 6×10 −4 rlu or less.
2. The substrate according to claim 1 , wherein, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the gallium nitride crystal, a Qx width at 1/1000th of peak intensity is 1×10 −3 rlu or less.
3. The substrate according to claim 1 , wherein the number of stacking faults visible in cathodoluminescence imaging is 3×10 3 /cm or less.
4. The substrate according to claim 1 , wherein a c-axis misorientation angle distribution at a distance of 40 mm is within ±0.5°.
5. The substrate according to claim 1 , which is a gallium nitride single-crystal self-supporting substrate.
6. The substrate according to claim 1 , wherein the gallium nitride single-crystal substrate thickness is 0.3 mm or more.
7. The substrate according to claim 1 , wherein the gallium nitride single-crystal substrate thickness is 0.4 mm or more.
8. The substrate according to claim 1 , comprising a gallium nitride crystal grown on a non-polar plane of the gallium nitride.
9. The substrate according to claim 8 , wherein the gallium nitride crystal is grown by hydride vapor-phase epitaxy.
10. The substrate according to claim 1 , comprising a gallium nitride crystal grown on a semi-polar plane of the gallium nitride.
11. The substrate according to claim 10 , wherein the gallium nitride crystal is grown by hydride vapor-phase epitaxy.
12. The substrate according to claim 1 , wherein the gallium nitride crystal is grown by hydride vapor-phase epitaxy.
13. The substrate according to claim 1 , wherein the Qx width at 1/300th of peak intensity is 4×10 −4 rlu or less.
14. The substrate according to claim 1 , wherein the Qx width at 1/300th of peak intensity is 3×10 −4 rlu or less.
15. The substrate according to claim 1 , wherein the number of stacking faults visible in cathodoluminescence imaging is not more than 1×10 3 /cm.
16. The substrate according to claim 1 , wherein the number of stacking faults visible in cathodoluminescence imaging is not more than 2×10 2 /cm.
17. A semiconductor device comprising the substrate according to claim 5 .