Solar cell having doped buffer layer and method of fabricating the solar cell

1. A method comprising:

forming a single buffer layer of a CdS material directly on an absorber layer of a photovoltaic device using a single non-chemical-bath-deposition process;

extrinsically doping the single buffer layer in a chamber after the forming step, with a dopant having a concentration that varies between a top surface of the single buffer layer and an interface between the single buffer layer and the absorber layer; and

forming a front contact layer of a second material directly on the single buffer layer in the same chamber, the CdS material extending from the interface between the buffer layer and the absorber layer to an interface between the buffer layer and the front contact layer, the second material having a different composition from the CdS material.

2. The method of claim 1 , wherein the step of extrinsically doping the buffer layer includes annealing the buffer layer.

3. The method of claim 1 , wherein the step of extrinsically doping the buffer layer includes annealing the buffer layer in an atmosphere comprising a dopant.

4. The method of claim 3 , wherein the atmosphere comprises at least one of the group consisting of boron (B), aluminum (Al), gallium (Ga), indium (In), or combinations thereof.

5. The method of claim 3 , wherein the atmosphere comprises B 2 H 6 .

6. The method of claim 3 , wherein the annealing is performed at a temperature in a range from about 70° C. to about 400° C.

7. The method of claim 6 , wherein the annealing is performed at about 170° C. for about 10 minutes.

8. The method of claim 1 , wherein the step of forming the front contact layer comprises metal organic chemical vapor deposition.

9. A method comprising:

forming a single buffer layer of a first CdS material directly on an absorber layer of a photovoltaic device by a non-chemical-bath-deposition (CBD) process from the group consisting of atomic layer deposition, sputtering, electro-deposition, evaporation or chemical vapor deposition;

extrinsically doping the single buffer layer in a metal organic chemical vapor deposition (MOCVD) chamber; and

forming a front contact layer of a second material directly on the single buffer layer in the same MOCVD chamber, the CdS material extending from an interface between the buffer layer and the absorber layer to an interface between the buffer layer and the front contact layer, the second material having a different composition from the CdS material.

10. The method of claim 9 , wherein the step of extrinsically doping the buffer layer includes annealing the buffer layer.

11. The method of claim 9 , wherein the step of extrinsically doping the buffer layer includes annealing the buffer layer in an atmosphere comprising a dopant.

12. The method of claim 11 , wherein the atmosphere comprises B 2 H 6 .

13. The method of claim 12 , wherein the annealing is performed at about 170° C. for about 10 minutes.

14. The method of claim 9 wherein the step of forming the front contact layer comprises metal organic chemical vapor deposition.

15. The method of claim 9 , further comprising forming a front contact layer over the buffer layer, wherein:

the steps of extrinsically doping the buffer layer and forming the front contact layer are both performed in a same chamber;

the step of extrinsically doping the buffer layer includes annealing the buffer layer in an atmosphere comprising B 2 H 6 at about 170° C. for about 10 minutes; and

the step of forming the front contact layer comprises metal organic chemical vapor deposition.

16. The method of claim 15 , further comprising:

forming a back contact of molybdenum over a substrate comprising glass, plastic or a metal foil;

forming the absorber over the back contact, where the absorber comprises at least one of the group consisting of copper (Cu), gallium (Ga), indium (In), aluminum (Al), selenium (Se), sulfur (S), or combinations thereof.

17. A method comprising:

forming a single buffer layer of CdS directly on an absorber layer of a photovoltaic device;

annealing the single buffer layer in a metal organic chemical vapor deposition (MOCVD) chamber having an atmosphere containing B 2 H 6 after the forming step, so as to have a higher concentration of boron dopant at a top surface of the single buffer layer than at an interface between the single buffer layer and the absorber layer; and

forming a front contact layer of a transparent conductive oxide directly on the single buffer layer in the same MOCVD chamber where the annealing is performed, so the CdS extends from the interface between the buffer layer and the absorber layer to an interface between the buffer layer and the front contact layer.

18. The method of claim 17 , wherein:

the buffer layer is annealed at about 170° C. for about 10 minutes, and

the step of forming the front contact layer comprises metal organic chemical vapor deposition.

19. The method of claim 1 , wherein the doping increases the concentration in the single buffer layer at an interface between the single buffer layer and the absorber layer.