Semiconductor light-emitting element and method of manufacturing the same
View Patent ↗A transparent electrode is made of a first transparent electrode and a second transparent electrode containing a metal atom whose concentration is 10 wt % or less. The first transparent electrode is provided in a region which is overlapped with a p-side pad electrode when seen in a plane view, and the second transparent electrode is provided in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. an electric current injected from the p-side pad electrode is diffused into the second transparent electrode, and is injected efficiently into an active layer in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. Therefore, the luminous efficiency increases. Also, a contact resistance between the second transparent electrode and the p-type contact layer is low, the element resistance decreases.
1. A semiconductor light-emitting element comprising:
a substrate which has a first surface and a second surface opposite to the first surface;
a semiconductor layer which is formed on the first surface of the substrate;
a first transparent electrode which is formed in a first region of the semiconductor layer;
a second transparent electrode which is formed in a second region except for the first region of the semiconductor layer and which contains a metal atom;
a first electrode which is in direct contact with the first transparent electrode and which is electrically connected with a part of the first transparent electrode; and
a second electrode which is formed on the second surface of the substrate,
wherein a contact resistance between the second transparent electrode and the semiconductor layer is 1×10 −4 Ω·cm 2 or less, and
wherein the first transparent electrode does not contain the metal atom.
2. The semiconductor light-emitting element according to claim 1 ,
wherein a concentration of the metal atom contained in the second transparent electrode is 1 wt % to 10 wt %.
3. The semiconductor light-emitting element according to claim 1 ,
wherein a concentration of the metal atom contained in the second transparent electrode is 1 wt % to 3 wt %.