Garnet materials for Li secondary batteries and methods of making and using garnet materials
Set forth herein are garnet material compositions, e.g., lithium-stuffed garnets and lithium-stuffed garnets doped with alumina, which are suitable for use as electrolytes and catholytes in solid state battery applications. Also set forth herein are lithium-stuffed garnet thin films having fine grains therein. Disclosed herein are novel and inventive methods of making and using lithium-stuffed garnets as catholytes, electrolytes and/or anolytes for all solid state lithium rechargeable batteries. Also disclosed herein are novel electrochemical devices which incorporate these garnet catholytes, electrolytes and/or anolytes. Also set forth herein are methods for preparing novel structures, including dense thin (<50 um) free standing membranes of an ionically conducting material for use as a catholyte, electrolyte, and, or, anolyte, in an electrochemical device, a battery component (positive or negative electrode materials), or a complete solid state electrochemical energy storage device. Also, the methods set forth herein disclose novel sintering techniques, e.g., for heating and/or field assisted (FAST) sintering, for solid state energy storage devices and the components thereof.
1. A method for making a sintered lithium-stuffed garnet thin film, the method comprising, the following steps in the following order:
providing a slurry comprising a lithium-stuffed garnet, a binder, and a solvent;
casting the slurry onto a flat substrate to form a film;
removing the binder by combustion; and
sintering the film on the flat substrate or another flat substrate to form a sintered lithium-stuffed garnet thin film,
wherein the sintered lithium-stuffed garnet thin film has a porosity of less than 10% by volume.
2. The method of claim 1 , wherein the slurry further comprises lithium-stuffed garnet chemical precursors, wherein the lithium-stuffed garnet chemical precursors comprise one or more members selected from the group consisting of LiOH, Li 2 O, ZrO 2 , La 2 O 3 , Al 2 O 3 , Al(NO 3 ) 3 , Nb 2 O 5 , Ta 2 O 5 , Li 2 CO 3 , AlNO 3 -hydrate, Al(NO 3 ) 3 .9H 2 O, aluminum hydroxide, aluminum oxide hydroxide, and combinations thereof.
3. The method of claim 2 , further comprising depositing one or more additional layers of the slurry onto the film to form a multilayer film; and sintering the multilayer film.
4. The method of claim 1 , wherein the slurry further comprises a source of lithium, and wherein the source of lithium is a member selected from LiF, LiCl, LiBr, LiOH, Li 2 CO 3 , Li 2 O, Li 2 O 2 , lithium-stuffed garnet, Li (s) , and combinations thereof.
5. The method of claim 1 , wherein the slurry comprises a flux.
6. The method of claim 1 , wherein the method further comprises milling the slurry, wherein the milling is selected from the group consisting of ball milling, solvent milling, horizontal milling, attritor milling, jet milling, immersion milling, and high energy milling.
7. The method of claim 6 , wherein the milling step results in lithium-stuffed garnet particle sizes that have a d 50 of 1 μm or less.
8. The method of claim 7 , wherein the lithium-stuffed garnet particle sizes have a d 50 of about 50-200 nm.
9. The method of claim 6 , wherein the milling comprises solvent milling and wherein the solvent is a polar solvent.
10. The method of claim 9 , wherein the solvent used for solvent milling is selected from the group consisting of toluene, isopropanol, ethanol, acetic acid, diacetone alcohol, acetonitrile, ethyl acetate, methyl ethyl ketone, and combinations thereof.
11. The method of claim 6 , where the method further comprises mixing the slurry, and wherein the milling and mixing occur simultaneously.
12. The method of claim 1 , wherein the flat substrate comprises a metal selected from the group consisting of Al, Ni, Cu, Au, Ag, Fe, steel, stainless steel, Li, alloys thereof, and combinations thereof.
13. The method of claim 1 , further comprising calcining the film prior to sintering the film, and wherein calcining occurs at a temperature from about 300° C. to about 1000° C.
14. The method of claim 1 , further comprising applying pressure to the film prior to, or concurrent with, sintering the film.
15. The method of claim 1 , wherein the slurry further comprises a member selected from the group consisting of NASICON, LISICON, and a tungsten bronze.
16. The method of claim 1 , further comprising sintering the film at about 1100° C. for about 15 minutes to about 2 hours.
17. The method of claim 1 , wherein the binder is selected from the group consisting of polypropylene (PP), polyvinyl butyral (PVB), polyvinyl pyrrolidone (PVP), atactic polypropylene (aPP), isotactic polypropylene, ethylene propylene rubber (EPR), ethylene pentene copolymer (EPC), polyisobutylene (PIB), styrene butadiene rubber (SBR), polyolefins, polyethylene-co-poly-1-octene (PE-co-PO), polyethylene-co-poly(methylene cyclopentane) (PE-co-PMCP), stereoblock polypropylenes, polypropylene polymethylpentene copolymer, celluloses, polymethylmethacrylate, B-72 paraloid, silicone, and combinations thereof.
18. The method of claim 1 , wherein the film is sintered on another flat substrate comprising a garnet-based setter plate.
19. The method of claim 1 , wherein the film is sintered on another flat substrate comprising an inert setter plate.
20. The method of claim 19 , wherein the inert setter plate comprises porous zirconia.
21. The method of claim 19 , wherein the inert setter plate comprises YSZ, graphite, Mg—SZ, zirconia, SiO 2 , Al 2 O 3 , nickel, lithium-stuffed garnet, a sacrificial lithium-stuffed garnet film, LiAlO 2 , LiLaO 2 , or Li 2 ZrO 3 .
22. The method of claim 21 , wherein the inert setter plate comprises porous zirconia, SiO 2 -sand, Al 2 O 3 powder, Al 2 O 3 paper, nickel powder, lithium-stuffed garnet powder, or a sacrificial lithium-stuffed garnet film.
23. The method of claim 1 , wherein the sintered lithium-stuffed garnet thin film is not adhered or fixed to the flat substrate or to the another substrate.
24. A sintered lithium-stuffed garnet thin film prepared by the method of claim 1 .