IP Library Granted Patent US 9,331,474
Granted Patent B1
US 9,331,474 · App. 14/509,427 · Granted May 3, 2016

Over-voltage protection circuit for a drive transistor

Inventors: Ranajay Mallik (Ghaziabad, IN); Luigi Abbatelli (Catania, IT); Giuseppe Catalisano (Carlentini, IT); Akshat Jain (Nahan, IN)
Assignees: STMICROELECTRONICS INTERNATIONAL N.V.; STMICROELECTRONICS S.R.L.
H02H7/205H02H1/0007
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,331,474
App. No.
14/509,427
Granted
May 3, 2016
Kind
B1
Abstract

A drive transistor is connected to a resonant load in a low-side drive configuration. The voltage across the conduction terminals of the drive transistor is sensed and compared to an over-voltage threshold. An over-voltage signal is asserted in response to the comparison. The drive transistor is controlled by a PWM control signal in normal mode. In response to the assertion of the over-voltage signal, the drive transistor is forced to turn on (irrespective of the PWM control signal) to relieve the over-voltage condition. Operation of the circuit may be disabled or forced into soft start mode in response to the assertion of the over-voltage signal. Additionally, the pulse width of the PWM control signal may be reduced in response to the assertion of the over-voltage signal.

Claims (39)

1. A circuit, comprising:

a drive transistor having a control terminal configured to receive a drive signal and having a first conduction terminal and a second conduction terminal, wherein said first conduction terminal is configured for connection to a load circuit;

a sense circuit configured to sense a voltage across the first and second conduction terminals;

a comparator circuit configured to compare the sensed voltage to voltage threshold and generate a signal indicative of an over-voltage condition; and

drive circuitry configured to generate said drive signal in response to a pulse width modulation (PWM) signal, said drive circuit including a force on circuit actuated in response to said signal indicative of the over-voltage condition to force said drive transistor to turn on irrespective of the PWM signal.

2. The circuit of claim 1 , wherein the drive transistor is an insulated gate bi-polar transistor (IGBT).

3. The circuit of claim 1 , further comprising said load circuit.

4. The circuit of claim 3 , wherein said load circuit is a resonant tank circuit.

5. The circuit of claim 1 , wherein the drive transistor is a low-side drive transistor.

6. The circuit of claim 1 , further comprising a PWM generator circuit configured to generate said PWM signal.

7. The circuit of claim 6 , wherein the PWM generator circuit includes a soft start circuit, and wherein the soft start circuit is actuated in response to said signal indicative of the over-voltage condition.

8. The circuit of claim 6 , wherein the PWM generator circuit includes an excessive over-voltage condition detection circuit configured to disable generation of the PWM signal if a number of signals indicative of the over-voltage condition are received in excess of a shut down threshold.

9. The circuit of claim 6 , wherein the PWM generator circuit includes an excessive over-voltage condition detection circuit configured to reduce a pulse width of the PWM signal if a number of signals indicative of the over-voltage condition are received in excess of a reduction threshold.

10. The circuit of claim 9 , wherein the excessive over-voltage condition detection circuit is further configured to incrementally reduce pulse width of the PWM signal with each reception of the signal indicative of the over-voltage condition in excess of said reduction threshold.

11. The circuit of claim 10 , wherein the excessive over-voltage condition detection circuit is still further configured to disable generation of the PWM signal if the number of signals indicative of the over-voltage condition received is in excess of a shut down threshold.

12. The circuit of claim 6 , wherein the PWM generator circuit includes a disable circuit configured to disable generation of the PWM signal in response to said signal indicative of the over-voltage condition.

13. A method, comprising:

applying a drive signal to a control terminal of a drive transistor including a conduction terminal configured for connection to a load circuit;

sensing a voltage across the first and second conduction terminals;

comparing the sensed voltage to voltage threshold;

generating a signal indicative of an over-voltage condition in response to said comparing; and

generating said drive signal in response to a pulse width modulation (PWM) signal,

wherein generating further comprises forcing said drive transistor to turn on in response to said signal indicative of the over-voltage condition irrespective of the PWM signal.

14. The method of claim 13 , further comprising actuating a soft start process for PWM signal generation in response to said signal indicative of the over-voltage condition.

15. The method of claim 13 , further comprising disabling PWM signal generation in response to said signal indicative of the over-voltage condition.

16. The method of claim 13 , further comprising disabling PWM signal generation if a number of signals indicative of the over-voltage condition are received in excess of a shut down threshold.

17. The method of claim 13 , further comprising reducing a pulse width of the PWM signal if a number of signals indicative of the over-voltage condition are received in excess of a reduction threshold.

18. The method of claim 17 , further comprising incrementally reducing pulse width of the PWM signal with each reception of the signal indicative of the over-voltage condition in excess of said reduction threshold.

19. The method of claim 18 , further comprising disabling generation of the PWM signal if the number of signals indicative of the over-voltage condition received is in excess of a shut down threshold.

20. A circuit, comprising:

a drive transistor having a control terminal configured to receive a drive signal and having a first conduction terminal and a second conduction terminal, wherein said first conduction terminal is configured for connection to a load circuit;

a sense circuit configured to sense a voltage across the first and second conduction terminals;

a comparator circuit configured to compare the sensed voltage to voltage threshold and generate a signal indicative of an over-voltage condition;

a pulse width modulation (PWM) signal generator configured to generate a PWM signal; and

a drive circuit configured to generate said drive signal in response to said PWM signal if the signal indicative of an over-voltage condition is not asserted and otherwise force said drive transistor to turn on if the signal indicative of the over-voltage condition is asserted.

21. The circuit of claim 20 , wherein the PWM signal generator comprises a soft start circuit actuated when the signal indicative of the over-voltage condition is asserted.

22. The circuit of claim 20 , wherein the PWM signal generator comprises a disable circuit actuated when the signal indicative of the over-voltage condition is asserted.

23. The circuit of claim 20 , wherein the PWM signal generator comprises a pulse width control circuit configured to reduce a pulse width of the PWM signal in response to assertion of the signal indicative of the over-voltage condition.

24. The circuit of claim 23 , wherein the pulse width control circuit is further configured to incrementally reduce the pulse width of the PWM signal with each assertion of the signal indicative of the over-voltage condition.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2022
From: STMICROELECTRONICS S.R.L.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 061828/0243 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2014
From: MALLIK, RANAJAY; ABBATELLI, LUIGI; CATALISANO, GIUSEPPE; JAIN, AKSHAT
To: STMICROELECTRONICS INTERNATIONAL N.V.; STMICROELECTRONICS S.R.L.
Reel/Frame 033912/0036 →