Micro-light-emitting diode
A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a dielectric layer, and electrodes. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The dielectric layer is disposed on the second type semiconductor layer. The dielectric layer includes openings therein to expose parts of the second type semiconductor layer. The electrodes partially are disposed on the dielectric layer and respectively electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, in which the electrodes are separated from each other.
1. A method for operating a micro-LED, comprising:
individually controlling electric potential of a plurality of electrodes of the micro-LED, wherein the micro-LED comprises:
a first type semiconductor layer;
a second type semiconductor layer disposed or above the first type semiconductor layer; and
a dielectric layer disposed on the second type semiconductor layer and the dielectric layer having a plurality of openings therein to expose a plurality of parts of the second type semiconductor layer, wherein the electrodes partially are disposed on the dielectric layer and respectively directly electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, wherein the electrodes are separated from each other,
wherein the electric potential of at least one of the electrodes is controlled to be V 1 , the electric potential of the other electrodes is controlled to be V 2 , and V 1 ≠V 2 .
2. A method for operating a micro-LED, comprising:
individually controlling electric potential of a plurality of electrodes of the micro-LED, wherein the micro-LED comprises:
a first type semiconductor layer;
a second type semiconductor layer disposed on or above the first type semiconductor layer; and
a dielectric layer disposed on the second type semiconductor layer and the dielectric layer having a plurality of openings therein to expose a plurality of parts of the second type semiconductor layer, wherein the electrodes partially are disposed on the dielectric layer and respectively directly electrically coupled with the exposed parts of the second type semiconductor layer through the openings of the dielectric layer, wherein the electrodes are separated from each other,
wherein the electric potential of a first group of the electrodes is controlled to be V 1 , the electric potential of a second group of the electrodes is controlled to be V 2 , and V 1 ≠V 2 .
3. The method of claim 1 , wherein the openings respectively have areas A 1 to An in order from smallest to largest, the micro-LED is operated within a linear current density range from J 1 to J 2 , and the openings are dimensioned to allow a current flowing through the micro-LED to be controlled within a continuous current range from A 1 *J 1 to (A 1 +A 2 + . . . An)*J 2 .
4. The method of claim 1 , wherein the openings respectively have areas A 1 to An in order from smallest to largest, the micro-LED is operated within a current density range from J 1 to J 2 , and a current flowing through the micro-LED is controlled to have a minimum A 1 *J 1 and a maximum (A 1 +A 2 + . . . An)*J 2 .
5. The method of claim 2 , wherein the openings respectively have areas A 1 to An in order from smallest to largest, the micro-LED is operated within a linear current density range from J 1 to J 2 , and the openings are dimensioned to allow a current flowing through the micro-LED to be controlled within a continuous current range from A 1 *J 1 to (A 1 +A 2 + . . . An)*J 2 .
6. The method of claim 2 , wherein the openings respectively have areas A 1 to An in order from smallest to largest, the micro-LED is operated within a current density range from J 1 to J 2 , and a current flowing through the micro-LED is controlled to have a minimum A 1 *J 1 and a maximum (A 1 +A 2 + . . . An)*J 2 .