Integrated circuit chip comprising electronic device and electronic system
An electronic device includes a substrate wafer made of an insulating material and having an electrical connection network. An integrated circuit chip is mounted to a top side of the substrate wafer. The substrate wafer contains an internal duct. The duct is formed by a covered trench located in the top side of the substrate wafer. The trench contains a thermally conductive material, for example being a fluid. Openings in the top side of the substrate wafer that are offset from the trench permit the making of an electrical connection between the integrated circuit and the electrical connection network.
1. An electronic device, comprising:
a substrate wafer made of an insulating material and including an electrical connection network;
wherein the electrical connection network comprises a metal level on a plane including electrical connection pads;
an integrated circuit chip mounted on a top side of the substrate wafer; and
wherein the substrate wafer comprises at least one internal duct formed in the substrate wafer by a groove which is covered by a superficial layer; and
an intermediate layer on said plane and which is covered by said superficial layer;
wherein said groove is formed in the intermediate layer, the intermediate layer and said superficial layer containing apertures above electrical connection pads, and said groove separated by a distance from said apertures; and
wherein a depth of said groove is smaller than a depth of the intermediate layer.
2. The device according to claim 1 , wherein said internal duct contains a thermally conductive material.
3. The device according to claim 1 , wherein said internal duct is separated by a distance from the electrical connection network.
4. The device according to claim 1 , wherein the substrate wafer further contains complementary internal ducts connected to said internal duct and configured for connection to means for making a fluid flow.
5. The device according to claim 1 , wherein the groove extends to a depth which does not reach a front side of the metal level.
6. The device according to claim 1 , wherein said electrical connection network comprises, in said metal level, electrical connection pads connected to the chip by intermediate electrical connection elements and electrical connection pads located around the chip, and, on the other side of the substrate wafer, electrical connection pads.
7. The device according to claim 1 , further comprising another wafer having another electrical connection network that is connected to said electrical connection network and another integrated circuit chip connected to this other electrical connection network.
8. The device according to claim 7 , further comprising a printed circuit board to which the substrate wafer is mounted by way of external metal elements connected to said electrical connection network.
9. An electronic device, comprising:
an integrated circuit including a surface with connecting elements; and
a substrate wafer including:
an insulating material layer including an electrical connection network;
a metal level including electrical connection pads on a top surface of the insulating material layer and in electrical contact with the electrical connection network;
an intermediate layer over the metal layer and the insulating material layer;
a plurality of trenches formed in a top surface of the intermediate layer;
a plurality of openings formed in the top surface of the intermediate layer and positioned between said trenches; and
a superficial layer on a top surface of the intermediate layer and configured to close said trenches to form at least one internal duct;
wherein said surface of said integrated circuit is mounted to the substrate wafer with said connecting elements extending into said openings.
10. The device of claim 9 , further including a thermally conductive material contained within the internal ducts.
11. The device of claim 10 , wherein the thermally conductive material is a fluid.
12. The device of claim 11 , further including complementary internal ducts formed in the substrate wafer in fluid communication with the internal ducts.
13. The device of claim 12 , wherein the complementary internal ducts are configured for connection to means for making said fluid flow.
14. The device of claim 9 , wherein the plurality of openings formed in the top surface of the intermediate layer expose the electrical connection pads of the metal layer, and wherein the connecting elements of said integrated circuit are electrically connected to the electrical connection pads through the openings.
15. The device of claim 14 , wherein the openings are separated from the trenches.
16. The device of claim 14 , wherein each opening extends completely through the superficial layer.
17. The device of claim 9 , wherein a depth of the trenches is smaller than a depth of the intermediate layer.
18. The device of claim 9 , wherein the plurality of trenches are connected together to form a serpentine path.