Low-E panels and methods for forming the same

1. A method for forming a low-e panel, the method comprising:

providing a transparent substrate;

forming a first base layer above the transparent substrate, wherein the first base layer comprises zinc and tin;

forming a first dielectric layer above and directly contacting the first base layer, wherein the first dielectric layer comprises niobium oxide;

forming a first seed layer above and directly contacting the first dielectric layer, wherein the first seed layer comprises zinc;

forming a first reflective layer above the first seed layer;

forming a first barrier layer above the first reflective layer, wherein the first barrier layer comprises nickel, titanium, and niobium;

forming a second base layer above the first barrier layer, wherein the second base layer comprises zinc and tin;

forming a second dielectric layer above and directly contacting the second base layer, wherein the second dielectric layer comprises niobium oxide;

forming a second seed layer above and directly contacting the second dielectric layer, wherein the second seed layer comprises zinc;

forming a second reflective layer above the second seed layer;

forming a second barrier layer above the second reflective layer, wherein the second barrier layer comprises nickel, titanium, and niobium;

forming a first over-coating layer above the second barrier layer, wherein the first over-coating layer comprises zinc and tin;

forming a second over-coating layer above the first over-coating layer, wherein the second over-coating layer comprises zinc; and

forming a capping layer above the second over-coating layer,

wherein the first dielectric layer has a refractive index that is higher than a refractive index of the first base layer, and the second dielectric layer has a refractive index that is higher than a refractive index of the second base layer.

2. The method of claim 1 , wherein the refractive index of the first dielectric layer is the same as the refractive index of the second dielectric layer.

3. The method of claim 2 , wherein the refractive index of the first base layer is the same as the refractive index of the second base layer.

4. The method of claim 3 , wherein the refractive index of the first base layer and the second base layer is about 2.0, and the refractive index of the first dielectric layer and the second dielectric layer is between about 2.3 and about 2.5.

5. The method of claim 3 , wherein each of the first dielectric layer and the second dielectric layer has a thickness of between about 100 Angstroms (Å) and about 180 Å.

6. The method of claim 3 , wherein each of the first base layer and the second base layer comprises zinc-tin oxide.

7. The method of claim 1 , wherein each of the first seed layer, the second seed layer, and the second over-coating layer comprises zinc oxide.

8. The method of claim 1 , wherein each of the first reflective layer and the second reflective layer comprises silver.

9. The method of claim 1 , wherein the transparent substrate comprises glass.

10. A method for forming a low-e panel, the method comprising:

providing a transparent substrate;

forming a first base layer above the transparent substrate, wherein the first base layer comprises zinc and tin and has a refractive index of about 2.0;

forming a first dielectric layer above and directly contacting the first base layer, wherein the first dielectric layer comprises niobium oxide and has a refractive index of between about 2.3 and about 2.5;

forming a first seed layer above and directly contacting the first dielectric layer, wherein the first seed layer comprises zinc;

forming a first reflective layer above the first seed layer, wherein the first reflective layer comprises silver;

forming a first barrier layer above the first reflective layer, wherein the first barrier layer comprises nickel, titanium, and niobium;

forming a second base layer above the first barrier layer, wherein the second base layer comprises zinc and tin and has a refractive index of about 2.0;

forming a second dielectric layer above and directly contacting the second base layer, wherein the second dielectric layer comprises niobium oxide and has a refractive index between about 2.3 and about 2.5;

forming a second seed layer above and directly contacting the second dielectric layer, wherein the second seed layer comprises zinc;

forming a second reflective layer above the second seed layer, wherein the second reflective layer comprises silver;

forming a second barrier layer above the second reflective layer, wherein the second barrier layer comprises nickel, titanium, and niobium;

forming a first over-coating layer above the second barrier layer, wherein the first over-coating layer comprises zinc and tin;

forming a second over-coating layer above the first over-coating layer, wherein the second over-coating layer comprises zinc; and

forming a capping layer above the second over-coating layer.

11. The method of claim 10 , wherein each of the first dielectric layer and the second dielectric layer has a thickness of between about 100 Angstroms (Å) and about 180 Å.

12. The method of claim 11 , wherein each of the first the base layer and the second base layer comprises zinc-tin oxide.

13. The method of claim 12 , wherein each of the first the seed layer and the second seed layer comprises zinc oxide.

14. A low-e panel comprising:

a transparent substrate;

a first base layer formed above the transparent substrate, wherein the first base layer comprises zinc and tin;

a first dielectric layer formed above and directly contacting the first base layer, wherein the first dielectric layer comprises niobium oxide;

a first seed layer formed above and directly contacting the first dielectric layer, wherein the first seed layer comprises zinc;

a first reflective layer formed above the first seed layer;

a first barrier layer formed above the first reflective layer, wherein the first barrier layer comprises nickel, titanium, and niobium;

a second base layer formed above the first barrier layer, wherein the second base layer comprises zinc and tin;

a second dielectric layer formed above and directly contacting the second base layer, wherein the second dielectric layer comprises niobium oxide;

a second seed layer formed above and directly contacting the second dielectric layer, wherein the second seed layer comprises zinc;

a second reflective layer formed above the second seed layer;

a second barrier layer formed above the second reflective layer, wherein the second barrier layer comprises nickel, titanium, and niobium;

a first over-coating layer formed above the second barrier layer, wherein the first over-coating layer comprises zinc and tin;

a second over-coating layer formed above the first over-coating layer, wherein the second over-coating layer comprises zinc; and

a capping layer formed above the second over-coating layer,

wherein the first dielectric layer has a refractive index that is higher than a refractive index of the first base layer, and the second dielectric layer has a refractive index that is higher than a refractive index of the second base layer.

15. The low-e panel of claim 14 , wherein the refractive index of the first dielectric layer is the same as the refractive index of the second dielectric layer, and the refractive index of the first base layer is the same as the refractive index of the second base layer.

16. The low-e panel of claim 15 , wherein the refractive index of the first base layer and the second base layer is about 2.0, and the refractive index of the first dielectric layer and the second dielectric layer is between about 2.3 and about 2.5.

17. The low-e panel of claim 16 , wherein each of the first dielectric layer and the second dielectric layer has a thickness of between about 100 Angstroms (Å) and about 180 Å.

18. The low-e panel of claim 17 , wherein each of the first base layer, the second base layer, and the first over-coating layer comprises zinc-tin oxide.