Display device having a multilayered undercoating layer of silicon oxide and silicon nitride
View Patent ↗According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.
1. A display device comprising:
an underlying insulation layer formed on an upper surface of a resin layer; and
a thin-film transistor comprising an active layer which is formed above the upper surface of the resin layer,
wherein the underlying insulation layer consists of a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film,
wherein in the underlying insulation layer the first silicon oxide film is in contact with the resin layer and the second silicon oxide film is in contact with the active layer of the thin-film transistor, and
wherein the upper surface of the resin layer and a peripheral surface of the resin layer, but not a bottom surface of the resin layer, are covered with the first silicon oxide film.
2. The display device of claim 1 , wherein the active layer is formed of polysilicon.
3. The display device of claim 1 , wherein the first silicon oxide film has a thickness of 10 nm or more, and 100 nm or less.
4. The display device of claim 1 , wherein the second silicon oxide film has a thickness of 100 nm or more, and 500 nm or less.
5. The display device of claim 1 , wherein the resin layer comprises a polyimide.
6. The display device of claim 1 , wherein the resin layer comprises a polyamide-imide or a polyaramide.
7. The display device of claim 1 , wherein the resin layer has a thickness of 5 to 30μm.
8. The display device of claim 1 , wherein
the resin layer has a thickness of 5 to 30 μm;
the first silicon oxide film has a thickness of 10 nm or more and 100 nm or less; and
the second silicon oxide film has a thickness of 100 nm or more and 500 or less.
9. The display device of claim 8 , wherein the resin layer comprises a polyimide.
10. The display device of claim 8 , wherein the resin layer comprises a polyamide-imide or a polyaramide.
11. The display device of claim 1 , wherein the display device is prepared by a process comprising forming the resin layer on a glass substrate, then covering the upper surface of the resin layer and the peripheral surface of the resin layer with the first silicon oxide film to form a covered resin layer, and peeling the covered resin layer from the glass substrate.