Pressure sensors and methods of making the same
A pressure sensor assembly comprising: three stacked silicon wafers which form a support, a sensor and a cover wherein the sensor includes a cavity extending from the bottom of the sensor up towards the top of the sensor to form a cavity bottom and a diaphragm; a dielectric layer covering the bottom of the sensor and the cavity and wherein the support is coupled to the dielectric layer along the bottom of the sensor; a plurality of ports located on a top of the support within an area defined by the cavity, the plurality of ports extending through the support to its bottom and wherein the cover is coupled to the top of the sensor covering the diaphragm; and, a second cavity cut into a bottom of the cover wherein the second cavity is sized and positioned to surround the diaphragm.
1. A method for manufacturing a pressure sensor assembly comprising:
forming a sensor from a first silicon wafer by creating a cavity that extends up into the first silicon wafer from a bottom;
forming a conductive layer over the top of the first silicon wafer;
forming a support from a second silicon wafer by creating a plurality of channels that pass through the second silicon wafer from a top surface to a bottom surface;
bonding the bottom of the first silicon wafer to the top surface of the second silicon wafer such that a chamber is formed by the cavity and the plurality of channels open into the chamber;
forming a dielectric layer that electrically isolates the chamber from the sensor;
forming a cover from a third silicon wafer by creating a second cavity that extends up into the third silicon wafer from a bottom; and
bonding the bottom of the third silicon wafer to a top of the first silicon wafer such that the second cavity surrounds the diaphragm.
2. The method of manufacturing a pressure sensor assembly of claim 1 , wherein a depth of the second cavity is cut to mechanically limit motion of the diaphragm to less than 3 times a full-scale pressure displacement.
3. The method of manufacturing a pressure sensor assembly of claim 1 , wherein a depth of the second cavity is less than or equal 0.9 μm.
4. The method of manufacturing a pressure sensor assembly of claim 1 , wherein the dielectric layer is made of silicon dioxide or silicon nitride.
5. The method of manufacturing a pressure sensor assembly of claim 1 , wherein the dielectric layer separates the sensor from the support.
6. The method of manufacturing a pressure sensor assembly of claim 1 , wherein the dielectric layer covers the surfaces of the chamber.
7. The method of manufacturing a pressure sensor assembly of claim 1 , further comprising bonding a substrate to the bottom surface of the support, the substrate including a channel that runs from a top of the substrate to a bottom of the substrate and wherein a channel opening at the top of the substrate covers the plurality of channels on the bottom surface of the support.
8. The method of manufacturing a pressure sensor assembly of claim 1 , further comprising forming a conductive layer on a bottom of the cavity of the third silicon wafer.
9. The method of manufacturing a pressure sensor assembly of claim 8 , further comprising forming an electrical contact on a top of the third silicon wafer connected to the conductive layer on the bottom of the cavity of the third silicon wafer.
10. The method of manufacturing a pressure sensor assembly of claim 1 , wherein a conductive layer on the top side of the diaphragm comes into contact and forms a closed circuit with the conductive layer on the bottom of the second cavity when the diaphragm displaces into the full depth of the second cavity.
11. A method for manufacturing a pressure sensor assembly comprising:
forming a sensor from a first silicon wafer wherein the sensor includes a diaphragm;
forming an electrical circuit on the top of the sensor;
forming a support from a second silicon wafer;
bonding a bottom of the first silicon wafer to a top surface of the second silicon wafer such that a chamber, encapsulated by the first silicon wafer and the second silicon wafer, is formed;
creating a plurality of channels that pass through the second silicon wafer from the chamber to a bottom surface of the second silicon wafer;
forming a dielectric layer that electrically isolates the chamber from the sensor;
forming a cover from a third silicon layer; and,
bonding a bottom of a third silicon wafer to a top of the first silicon wafer such that a gap above the diaphragm remains between the sensor and the cover.
12. The method of manufacturing a pressure sensor assembly of claim 11 , wherein the gap is less than 3 times a full-scale pressure displacement of the diaphragm.
13. The method of manufacturing a pressure sensor assembly of claim 11 , wherein the gap is less than or equal 0.9 μm.
14. The method of manufacturing a pressure sensor assembly of claim 11 , wherein the dielectric layer is made of silicon dioxide or silicon nitride.
15. The method of manufacturing a pressure sensor assembly of claim 11 , wherein the dielectric layer separates the sensor from the support.
16. The method of manufacturing a pressure sensor assembly of claim 11 , wherein the dielectric layer covers the surfaces of the chamber.
17. The method of manufacturing a pressure sensor assembly of claim 11 , further comprising forming a second conductive layer on a surface of the gap opposite the conductive layer above the diaphragm.
18. The method of manufacturing a pressure sensor assembly of claim 17 , further comprising forming an electrical contact on a top of the third silicon wafer in electrical communication with the second conductive layer.
19. The method of manufacturing a pressure sensor assembly of claim 17 , wherein the conductive layer comes into contact and forms a closed circuit with the second conductive layer when the diaphragm displaces into the full depth of the chamber.