RC-IGBT WITH FREEWHEELING SIC DIODE
A semiconductor module as disclosed can include a reverse conducting transistor, with a gate, a collector and an emitter providing a reverse conducting diode between collector and emitter; at least one freewheeling diode connected antiparallel to the transistor having a forward voltage drop higher than the reverse conducting diode during a static state; and a controller to turn the transistor on and off. The controller can apply a pulse to the transistor gate before the reverse conducting diode enters a blocking state, such that when the reverse conducting diode enters the blocking state, a forward voltage drop of the reverse conducting diode is higher than of the at least one freewheeling diode.
1 . A semiconductor module, comprising:
a reverse conducting transistor with a gate, a collector and an emitter providing a reverse conducting diode between the collector and emitter;
at least one freewheeling diode connected antiparallel to the transistor and having a forward voltage drop higher than the reverse conducting diode during a static state; and
a controller for connecting the gate with an electrical potential to turn the transistor on and off;
wherein the controller is configured for applying a gate pulse of positive electrical potential to the gate of the transistor before the reverse conducting diode enters a blocking state, such that in a dynamic state, in which the reverse conducting diode enters the blocking state, a forward voltage drop of the reverse conducting diode is higher than that of the at least one freewheeling diode;
wherein the reverse conducting transistor is a RC-IGBT or a BIGT, and
wherein the at least one freewheeling diode includes a SiC diode.
2 . The semiconductor module of claim 1 , wherein the controller is configured for applying a negative potential to the gate when the reverse conducting diode is in a conducting state, and for applying a positive potential to the gate during the gate pulse.
3 . The semiconductor module of claim 1 , wherein during the static state, a resistance of the reverse conducting diode is smaller than a resistance of the at least one freewheeling diode.
4 . The semiconductor module of claim 1 , comprising:
more than one freewheeling diode connected antiparallel with the transistor.
5 . The semiconductor module of claim 1 , wherein the at least one freewheeling diode antiparallel to the transistor is adjusted to the transistor to minimize switching losses of the semiconductor module in a predefined temperature range.
6 . The semiconductor module of claim 1 , wherein the at least one freewheeling diode antiparallel to the transistor is adjusted such that in a predefined temperature range at least one of:
during the static state, at least 60% of current will flow through the reverse conducting diode; or
during the dynamic state, at least 60% of the current will flow through the at least one freewheeling diode.
7 . The semiconductor module of claim 5 , wherein the temperature range is 50° C. to 200° C.
8 . The semiconductor module of claim 1 , wherein the controller is configured for determining that the reverse conducting diode will switch from a conducting state into a blocking state.
9 . The semiconductor module of claim 1 , comprising:
a first reverse conducting transistor connected in series with a second reverse conducting transistor, wherein a first DC input is provided by a free end of the first reverse conducting transistor, a second DC input is provided by a free end of the second reverse conducting transistor, and a phase output is provided between the series connected first and second reverse conducting transistors;
wherein the at least one freewheeling diode is connected antiparallel to the first reverse conducting transistor; and
wherein the controller is configured for determining that the reverse conducting diode of the first reverse conducting transistor will switch from a conducting into a blocking state by receiving a switch command for the second reverse conducting transistor.
10 . The semiconductor module of claim 9 , wherein the controller is configured for switching the second reverse conducting transistor from a turned-off state into a turned-on state by turning a negative potential at the gate of the second reverse conducting transistor into a positive potential at the gate after receiving the switch command.
11 . The semiconductor module of claim 9 , wherein a pulse length of the gate pulse applied to the first transistor is at least 10% of a length of a turned-off state of the second reverse conducting transistor.
12 . The semiconductor module of claim 9 , wherein the controller is configured for waiting a blocking time period after the gate pulse before switching the second reverse conducting transistor into a turned-off state.
13 . A method for switching a reverse conducting transistor and at least one freewheeling diode connected antiparallel to the transistor, wherein the at least one freewheeling diode has a forward voltage drop higher than a reverse conducting diode of the transistor during a static state, the method comprising:
determining that the reverse conducting diode will switch from a conducting state into a blocking state; and
applying a gate pulse of positive electrical potential to a gate of the transistor before the reverse conducting diode enters a blocking state, such that in a dynamic state, in which the reverse conducting diode enters the blocking state, a forward voltage drop of the reverse conducting diode is higher than that of the at least one freewheeling diode, wherein the reverse conducting transistor is a RC-IGBT or a BIGT, and wherein the at least one freewheeling diode includes a SiC diode.
14 . The semiconductor module of claim 2 , wherein during the static state, a resistance of the reverse conducting diode is smaller than a resistance of the at least one freewheeling diode.
15 . The semiconductor module of claim 2 , comprising:
more than one freewheeling diode connected antiparallel with the transistor.
16 . The semiconductor module of claim 15 , wherein the at least one freewheeling diode antiparallel to the transistor is adjusted to the transistor to minimize switching losses of the semiconductor module in a predefined temperature range.
17 . The semiconductor module of claim 16 , wherein the at least one freewheeling diode antiparallel to the transistor is adjusted such that in the predefined temperature range at least one of:
during the static state, at least 60% of current will flow through the reverse conducting diode; or
during the dynamic state, at least 60% of the current will flow through the at least one freewheeling diode.
18 . The semiconductor module of claim 17 , wherein the temperature range is 50° C. to 200° C.
19 . The semiconductor module of claim 2 , wherein the controller is configured for determining that the reverse conducting diode will switch from a conducting state into a blocking state.
20 . The semiconductor module of claim 2 , comprising:
a first reverse conducting transistor connected in series with a second reverse conducting transistor, wherein a first DC input is provided by a free end of the first reverse conducting transistor, a second DC input is provided by a free end of the second reverse conducting transistor, and a phase output is provided between the series connected first and second reverse conducting transistors;
wherein the at least one freewheeling diode is connected antiparallel to the first reverse conducting transistor; and
wherein the controller is configured for determining that the reverse conducting diode of the first reverse conducting transistor will switch from a conducting into a blocking state by receiving a switch command for the second reverse conducting transistor.