Simulation method, simulation program, processing apparatus, simulator, and design method

1. A simulation method, comprising:

acquiring, by input circuitry, a processing condition for performing predetermined processing on a processing target with use of plasma;

calculating, by calculation circuitry, a solid angle corresponding to a field-of-view region through which plasma space is viewable from a respective predetermined evaluation point among a plurality of predetermined evaluation points on a surface of the processing target based on the processing condition; and

calculating, by the calculation circuitry, an incident radical amount entering the respective predetermined evaluation point by a flux method with use of a function which takes a reaction probability between the solid angle and the respective predetermined evaluation point of a radical entering the respective predetermined evaluation point as an argument.

2. The simulation method according to claim 1 , wherein

the calculation of the incident radical amount includes calculation a total sum between a first radical amount directly entering the respective predetermined evaluation point from the plasma space and a second radical amount emitted from the surface of the processing target and entering the respective predetermined evaluation point.

3. The simulation method according to claim 2 , wherein

in a case where the solid angle is equal to or less than a predetermined threshold value, the calculation of the incident radical amount includes calculation, as the incident radical amount, a radical amount obtained when the solid angle is the threshold value.

4. The simulation method according to claim 1 , wherein

when the solid angle is dQ, the reaction probability is Sn, and the radical amount generated in the plasma space is Γ n 0, in a case where dΩ>L, an incident radical amount Γ(dΩ, Sn) in the respective predetermined evaluation point is calculated by an equation of Γ(dΩ,Sn)/Γ n 0=[dΩ/(2π)+m 1 (Sn)dΩ m2(Sn) ] using m 1 (Sn) and m 2 (Sn) as a parameter depending on the reaction probability.

5. The simulation method according to claim 4 , wherein

in a case where dΩ≦L, the incident radical amount Γ(dΩ, Sn) in the respective predetermined evaluation point is kept constant at a value obtained when dΩ=L.

6. The simulation method according to claim 1 , wherein

when the solid angle is dΩ, the reaction probability is Sn, and the radical amount generated in the plasma space is Γ n 0, in a case where dΩ>L, an incident radical amount Γ(dΩ, Sn) in the respective predetermined evaluation point is calculated by an equation of Γ(dΩ,Sn)/Γ n 0=m 1 (Sn)[dΩ/(2π)+dΩ m2(Sn) ] using m 1 (Sn) and m 2 (Sn) as a parameter depending on the reaction probability.

7. A non-transitory computer readable medium storing instructions that, when executed by an information processing apparatus, cause the information processing apparatus to execute calculation, the calculation comprising:

calculating, by a calculation unit, a solid angle corresponding to a field-of-view region through which plasma space is viewable from a respective predetermined evaluation point among a plurality of predetermined evaluation points on a surface of a processing target based on a processing condition for performing predetermined processing on the processing target with use of plasma; and

calculating, by the calculation unit, an incident radical amount entering the evaluation point by a flux method with use of a function which takes a reaction probability between the solid angle and the respective predetermined evaluation point of a radical entering the respective predetermined evaluation point as an argument.

8. The non-transitory computer readable medium according to claim 7 , wherein

the calculation of the incident radical amount includes calculation a total sum between a first radical amount directly entering the respective predetermined evaluation point from the plasma space and a second radical amount emitted from the surface of the processing target and entering the respective predetermined evaluation point.

9. The non-transitory computer readable medium according to claim 8 , wherein

in a case where the solid angle is equal to or less than a predetermined threshold value, the calculation of the incident radical amount includes calculation, as the incident radical amount, a radical amount obtained when the solid angle is the threshold value.

10. A processing apparatus, comprising:

a processing unit configured to perform predetermined processing on a processing target with use of plasma;

a detecting unit configured to monitor a plasma state in the processing unit;

a simulator configured to simulate the predetermined processing; and

a control unit configured to control the processing unit based on a simulation result by the simulator, the simulator including

an input unit configured to acquire a processing condition for performing the predetermined processing,

a calculation unit configured to calculate a solid angle corresponding to a field-of-view region through which plasma space is viewable from a respective predetermined evaluation point among a plurality of predetermined evaluation points on a surface of the processing target based on the processing condition, and calculate an incident radical amount entering the evaluation point by a flux method with use of a function which takes a reaction probability between the solid angle and the respective predetermined evaluation point of a radical entering the respective predetermined evaluation point as an argument, and

an output unit configured to output, to the control unit, a correction signal of the processing condition generated based on the incident radical amount.

11. The processing apparatus according to claim 10 , further comprising

a management system configured to notify abnormality of the processing based on output of the simulator.

12. The processing apparatus according to claim 10 , wherein

the calculation of the incident radical amount includes calculation a total sum between a first radical amount directly entering the respective predetermined evaluation point from the plasma space and a second radical amount emitted from the surface of the processing target and entering the respective predetermined evaluation point.

13. The processing apparatus according to claim 12 , wherein

in a case where the solid angle is equal to or less than a predetermined threshold value, the calculation of the incident radical amount includes calculation, as the incident radical amount, a radical amount obtained when the solid angle is the threshold value.

14. A simulator, comprising:

input circuitry configured to acquire a processing condition for performing predetermined processing on a processing target with use of plasma; and

calculation circuitry configured to calculate a solid angle corresponding to a field-of-view region through which plasma space is viewable from a respective predetermined evaluation point among a plurality of predetermined evaluation points on a surface of the processing target based on the processing condition, and calculate an incident radical amount entering the evaluation point by a flux method with use of a function which takes a reaction probability between the solid angle and the respective predetermined evaluation point of a radical entering the respective predetermined evaluation point as an argument.

15. The simulator according to claim 14 , wherein

the calculation of the incident radical amount includes calculation a total sum between a first radical amount directly entering the respective predetermined evaluation point from the plasma space and a second radical amount emitted from the surface of the processing target and entering the respective predetermined evaluation point.

16. The simulator according to claim 15 , wherein

in a case where the solid angle is equal to or less than a predetermined threshold value, the calculation of the incident radical amount includes calculation, as the incident radical amount, a radical amount obtained when the solid angle is the threshold value.

17. A design method, comprising:

acquiring, by input circuitry, a processing condition for performing predetermined processing on a processing target with use of plasma;

calculating, by calculation circuitry, a solid angle corresponding to a field-of-view region through which plasma space is viewable from a respective predetermined evaluation point among a plurality of predetermined evaluation points on a surface of the processing target based on the processing condition;

calculating, by the calculation circuitry, an incident radical amount entering the evaluation point by a flux method with use of a function which takes a reaction probability between the solid angle and the respective predetermined evaluation point of a radical entering the respective predetermined evaluation point as an argument;

evaluating, by the calculation circuitry, a processing shape predicted based on the incident radical amount; and

changing, by the calculation circuitry, at least one of the processing condition and a layout in a chip based on an evaluation result of the processing shape.

18. The design method according to claim 17 , wherein

the calculation of the incident radical amount includes calculation a total sum between a first radical amount directly entering the respective predetermined evaluation point from the plasma space and a second radical amount emitted from the surface of the processing target and entering the respective predetermined evaluation point.

19. The design method according to claim 18 , wherein

in a case where the solid angle is equal to or less than a predetermined threshold value, the calculation of the incident radical amount includes calculation, as the incident radical amount, a radical amount obtained when the solid angle is the threshold value.