Simulation method, simulation program, process control system, simulator, process design method, and mask design method
A simulation method includes acquiring processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio, calculating, based on the conditions, a flux amount of a reaction product that enters the surface, calculating, based on mask information including the thickness and the aperture ratio and the flux amount, an etching rate of the wafer, calculating, based on the conditions and the etching rate, a dissociation fraction of the product, calculating, based on the information and the etching rate, a solid angle at a predetermined evaluation point set on the surface, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point, and calculating, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a surface shape.
1. A simulation method comprising:
acquiring processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio;
calculating, based on the processing conditions, a flux amount of a reaction product that enters the surface of the wafer;
calculating, based on mask information including the mask thickness and the aperture ratio and the flux amount, an etching rate of the wafer;
calculating, based on the processing conditions and the etching rate, a dissociation fraction of the reaction product;
calculating, based on the mask information and the etching rate, a solid angle at a predetermined evaluation point set on the surface of the wafer, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point;
calculating, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a shape of the surface of the wafer, and
modifying the etching process based on the calculations.
2. The simulation method according to claim 1 , wherein
the calculating the flux amount of the reaction product includes calculating the flux amount of the reaction product based on the processing conditions and the calculated dissociation fraction of the reaction product.
3. The simulation method according to claim 1 , wherein
the calculating the flux amount of the reaction product includes calculating the flux amount of the reaction product that functions as an etching protection film.
4. The simulation method according to claim 3 , further comprising
evaluating, based on the control index, damage on the wafer, which is caused due to an incident ion.
5. The simulation method according to claim 1 , wherein
as the aperture ratio, a wafer aperture ratio and a semi-local aperture ratio are used, the wafer aperture ratio being a ratio of the opening area of the mask to the area of the mask, the semi-local aperture ratio being a ratio of the opening area of the mask in a semi-local area that includes the evaluation point and is smaller than the wafer to the area of the semi-local area.
6. The simulation method according to claim 5 , wherein
the control index is represented by the following formula: (1−D)*ER*(R G +R S )Ω L (where ER represents the etching rate, D represents the dissociation fraction, Ω L represents the solid angle, R G represents the wafer aperture ratio, and R S represents the semi-local aperture ratio).
7. The simulation method according to claim 1 , wherein
the modifying the etching process includes modifying a gas pressure, a gas flow rate, a bias, a wafer temperature, or combinations thereof.
8. The simulation method according to claim 1 , wherein
the calculating the dissociation fraction is based on a gas density of an ion and a gas density of a radical involved in the reaction product.
9. A non-transitory computer-readable medium storing thereon a simulation program that, when executed by a processor of an information processing apparatus, causes the information processing apparatus to perform operations comprising:
calculating, based on processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio, a flux amount of a reaction product that enters the surface of the wafer;
calculating, based on mask information including the mask thickness and the aperture ratio and the flux amount, an etching rate of the wafer;
calculating, based on the processing conditions and the etching rate, a dissociation fraction of the reaction product;
calculating, based on the mask information and the etching rate, a solid angle at a predetermined evaluation point set on the surface of the wafer, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point;
calculating, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a shape of the surface of the wafer; and
modifying the etching process based on the calculations.
10. A process control system, comprising:
a plurality of etching apparatuses; and
controllers provided to the plurality of etching apparatuses, each of the plurality of controllers including a communication unit and a controller, the communication unit configured to communicate with a server, the controller configured to
transmit processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio and mask information including the mask thickness and the aperture ratio,
control the communication unit to receive, from the server, a control index for evaluating a shape of the surface of the wafer, the control index generated using a flux amount of a reaction product that enters the surface of the wafer, which is calculated based on the processing conditions, an etching rate of the wafer, which is calculated based on the mask information and the flux amount, a dissociation fraction of the reaction product, which is calculated based on the processing conditions and the etching rate, a solid angle at a predetermined evaluation point set on the surface of the wafer, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point, the solid angle being calculated based on the mask information and the etching rate, and the aperture ratio, and
control the plurality of etching apparatuses to modify the etching process based on the calculations.
11. A process control system, comprising:
a first processing apparatus configured to perform an etching process using plasma on a surface of a wafer; and
an information processing apparatus configured to predict shape development of the wafer, which is caused due to the etching process, the information processing apparatus including
an input unit configured to acquire processing conditions for performing the etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio, and
an arithmetic unit configured
to calculate, based on the processing conditions, a flux amount of a reaction product that enters the surface of the wafer,
to calculate, based on mask information including the mask thickness and the aperture ratio and the flux amount, an etching rate of the wafer,
to calculate, based on the processing conditions and the etching rate, a dissociation fraction of the reaction product,
to calculate, based on the mask information and the etching rate, a solid angle at a predetermined evaluation point set on the surface of the wafer, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point,
to calculate, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a shape of the surface of the wafer, and
to modify the etching process based on the calculations.
12. The process control system according to claim 11 , further comprising
a second processing apparatus that is configured to mutually communicate with the first processing apparatus and to receive arithmetic results obtained from the information processing apparatus.
13. A simulator comprising:
an input unit configured to acquire processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio, and
an arithmetic unit configured
to calculate, based on the processing conditions, a flux amount of a reaction product that enters the surface of the wafer,
to calculate, based on mask information including the mask thickness and the aperture ratio and the flux amount, an etching rate of the wafer,
to calculate, based on the processing conditions and the etching rate, a dissociation fraction of the reaction product,
to calculate, based on the mask information and the etching rate, a solid angle at a predetermined evaluation point set on the surface of the wafer, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point,
to calculate, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a shape of the surface of the wafer, and
to modify the etching process based on the calculations.
14. A process design method, comprising:
acquiring processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio;
calculating, based on the processing conditions, a flux amount of a reaction product that enters the surface of the wafer;
calculating, based on mask information including the mask thickness and the aperture ratio and the flux amount, an etching rate of the wafer;
calculating, based on the processing conditions and the etching rate, a dissociation fraction of the reaction product;
calculating, based on the mask information and the etching rate, a solid angle a predetermined evaluation point set on the surface of the wafer, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point;
calculating, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a shape of the surface of the wafer; and
changing the processing conditions so that the control index is within a predetermined range based on the calculations, thereby modifying the etching process.
15. A mask design method, comprising:
acquiring processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio;
calculating, based on the processing conditions, a flux amount of a reaction product that enters the surface of the wafer;
calculating, based on mask information including the mask thickness and the aperture ratio and the flux amount, an etching rate of the wafer;
calculating, based on the processing conditions and the etching rate, a dissociation fraction of the reaction product;
calculating, based on the mask information and the etching rate, a solid angle at a predetermined evaluation point set on the surface of the wafer, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point;
calculating, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a shape of the surface of the wafer; and
changing design of the mask so that the control index is within a predetermined range, based on the calculations.
16. The mask design method according to claim 15 , wherein
the changing the design of the mask includes changing a taper angle of a mask opening.
17. The mask design method according to claim 15 , wherein
the changing the design of the mask includes changing the aperture ratio.