Organic light emitting film package structure, device, apparatus, and fabrication thereof

1. An organic light emitting film package structure, comprising an organic light emitting unit and a film structure covering the organic light emitting unit, the film structure comprising a first film as a bottom film, a second film as a top film, and a transition layer disposed between the first film and the second film, the first film being SiX or SiXY, the second film being SiY or SiXY, and the transition layer comprising a plurality of SiX n Y m layers, the first film being formed of a material different from a material of the second film,

wherein a difference in atomic ratio of X or Y between two adjacent SiX n Y m layers in the transition layer is greater than a difference in atomic ratio of X or Y between the first film and a SiX n Y m layer adjacent to the first film or a difference in atomic ratio of X or Y between the second film and a SiX n Y m layer adjacent to the second film,

wherein a value of m and a value of n range from 0 to 1, inclusive;

wherein X is O, C or N, Y is O, C or N, and X and Y are different atoms.

2. The organic light emitting film package structure according to claim 1 , wherein a difference in atomic ratio of X or Y between adjacent SiX n Y m layers gradually increases and then gradually decreases along a direction from the first film to the second film or along a direction from the second film to the first film.

3. The organic light emitting film package structure according to claim 2 , wherein the first film of the film structure is SiCN, the second film of the film structure is SiN, and the transition layer is SiC n N m .

4. The organic light emitting film package structure according to claim 3 , wherein the transition layer comprises a SiC 0.9 N layer, a SiC 0.8 N layer, a SiC 0.2 N layer and a SiC 0.1 N layer superimposed upon each other along the direction from the first film to the second film.

5. The organic light emitting film package structure according to claim 4 , wherein a thickness of the SiC 0.1 N layer is in a range between 0.1 um and 0.5 um, a thickness of the SiC 0.2 N layer is in a range between 0.1 um and 0.5 um, a thickness of the SiC 0.8 N layer is in a range between 0.1 um and 0.5 um, a thickness of the SiC 0.9 N layer is in a range between 0.1 um and 0.5 um, a thickness of the first film is in a range between 0.2 um and 0.9 um, and a thickness of the second film is in a range between 0.2 um and 0.9 um.

6. The organic light emitting film package structure according to claim 2 , wherein the first film is SiO, the second film is SiN, and the transition layer is SiO n N m .

7. The organic light emitting film package structure according to claim 6 , wherein the transition layer comprises a SiO 0.9 N 0.1 layer, a SiO 0.8 N 0.2 layer, a SiO 0.2 N 0.8 layer, and a SiO 0.1 N 0.9 layer superimposed upon each other along the direction from the first film to the second film.

8. The organic light emitting film package structure according to claim 7 , wherein a thickness of the SiO 0.1 N 0.9 layer is in a range between 0.05 um and 0.1 um, a thickness of the SiO 0.2 N 0.8 layer is in a range between 0.05 um and 0.1 um, a thickness of the SiO 0.8 N 0.2 layer is in a range between 0.05 um and 0.1 um, a thickness of the SiO 0.9 N 0.1 layer is in a range between 0.05 um and 0.1 um, a thickness of the first film is in a range between 0.1 um and 0.2 um, and a thickness of the second film is in a range between 0.1 um and 0.2 um.

9. An organic light emitting device, comprising an organic light emitting unit and a film structure covering the organic light emitting unit, the film structure comprising a first film as a bottom film, a second film as a top film, and a transition layer disposed between the first film and the second film, the first film being SiX or SiXY, the second film being SiY or SiXY, and the transition layer comprising a plurality of SiX n Y m layers, the first film being formed of a material different from a material of the second film,

wherein a difference in atomic ratio of X or Y between two adjacent SiX n Y m layers in the transition layer is greater than a difference in atomic ratio of X or Y between the first film and a SiX n Y m layer adjacent to the first film or a difference in atomic ratio of X or Y between the second film and a SiX n Y m layer adjacent to the second film,

wherein a value of m and a value of n range from 0 to 1, inclusive;

wherein X is O, C or N, Y is O, C or N, and X and Y are different atoms.

10. The organic light emitting device according to claim 9 , wherein a difference in atomic ratio of X or Y between adjacent SiX n Y m layers gradually increases and then gradually decreases along a direction from the first film to the second film or along a direction from the second film to the first film.

11. The organic light emitting device according to claim 10 , wherein the first film of the film structure is SiCN, the second film of the film structure is SiN, and the transition layer is SiC n N m .

12. The organic light emitting device according to claim 11 , wherein the transition layer comprises a SiC 0.9 N layer, a SiC 0.8 N layer, a SiC 0.2 N layer, and a SiC 0.1 N layer superimposed upon each other along the direction from the first film to the second film.

13. The organic light emitting device according to claim 12 , wherein a thickness of the SiC 0.1 N layer is in a range between 0.1 um and 0.5 um, a thickness of the SiC 0.2 N layer is in a range between 0.1 um and 0.5 um, a thickness of the SiC 0.8 N layer is in a range between 0.1 um and 0.5 um, a thickness of the SiC 0.9 N layer is in a range between 0.1 um and 0.5 um, a thickness of the first film is in a range between 0.2 um and 0.9 um, and a thickness of the second film is in a range between 0.2 um and 0.9 um.

14. The organic light emitting device according to claim 10 , wherein the first film is SiO, the second film is SiN, and the transition layer is SiO n N m .

15. The organic light emitting device according to claim 14 , wherein the transition layer comprises a SiO 0.9 N 0.1 layer, a SiO 0.8 N 0.2 layer, a SiO 0.2 N 0.8 layer, and a SiO 0.1 N 0.9 layer superimposed upon each other along the direction from the first film to the second film.

16. The organic light emitting device according to claim 15 , wherein a thickness of the SiO 0.1 N 0.9 layer is in a range between 0.05 um and 0.1 um, a thickness of the SiO 0.2 N 0.8 layer is in a range between 0.05 um and 0.1 um, a thickness of the SiO 0.8 N 0.2 layer is in a range between 0.05 um and 0.1 um, a thickness of the SiO 0.9 N 0.1 layer is in a range between 0.05 um and 0.1 um, a thickness of the first film is in a range between 0.1 um and 0.2 um, and a thickness of the second film is in a range between 0.1 um and 0.2 um.

17. A method for manufacturing an organic light emitting film package structure, comprising:

providing an organic light emitting unit;

forming a first film of a film structure on the organic light emitting unit;

forming a transition layer of the film structure on the first film;

forming a second film on the transition layer,

wherein the first film is SiX or SiXY, the second film is SiY or SiXY, and the transition layer comprises a plurality of SiX n Y m layers, the first film being formed with a material different from a material of the second film;

wherein a difference in atomic ratio of X or Y between two adjacent SiX n Y m layers in the transition layer is greater than a difference in atomic ratio of X or Y between the first film and a SiX n Y m layer adjacent to the first film or a difference in atomic ratio of X or Y between the second film and a SiX n Y m layer adjacent to the second film;

wherein a value of m and a value of n range from 0 to 1, inclusive;

wherein X is O, C or N, Y is O, C or N, and X and Y are different atoms.

18. The fabrication method according to claim 17 , further comprising:

forming a buffer layer between the first film and the organic light emitting unit.

19. The organic light emitting film package structure according to claim 1 , further comprising a buffer layer between the first film and the organic light emitting unit.