SPIN VALVE ELEMENT
In order to increase the power which can be passed to a spin valve element, an insulating layer 24 or a nonmagnetic layer 51 is sandwiched by ferromagnetic layers 23, 25 , and a porous layer 10 ( 10 ′) having a plurality of minute holes is placed so as to be in contact with one of the ferromagnetic layers, or near the ferromagnetic layer with another layer intervening. By this means, even when a single-domain magnetic multilayer film extending over a broad region is not used, when, for example, microwave oscillation is induced by means of the spin valve element, the microwave power can be increased.
1 . A magnetic element, comprising:
a magnetic multilayer film, including at least three layers of an insulating layer and first and second ferromagnetic layers sandwiching the insulating layer; and
a porous layer, placed in contact with the first ferromagnetic layer or near the first ferromagnetic layer with another layer intervening, and having a plurality of minute holes, wherein
an electrical connection is made with the first ferromagnetic layer of the magnetic multilayer film through the minute holes of the porous layer, and another electrical connection is made with the second ferromagnetic layer.
2 . A magnetic element, comprising:
a magnetic multilayer film, including at least three layers of a nonmagnetic layer and first and second ferromagnetic layers sandwiching the nonmagnetic layer; and
a porous layer, placed in contact with the first ferromagnetic layer or near the first ferromagnetic layer with another layer intervening, and having a plurality of minute holes, wherein
an electrical connection is made with the first ferromagnetic layer of the magnetic multilayer film through the minute holes of the porous layer, and another electrical connection is made with the second ferromagnetic layer.
3 . The magnetic of claim 1 , wherein the porous layer is a porous alumina layer manufactured by an anodic oxidation method.
4 . The magnetic element of claim 1 , wherein, in the porous layer, the distance between the centers of adjacent minute holes is 1000 nm or less.
5 . The magnetic element of claim 3 , wherein, in the porous layer, the distance between the centers of adjacent minute holes is 1000 nm or less.
6 . The magnetic element of claim 1 , wherein the equivalent diameter of the minute holes is 100 nm or less.
7 . The magnetic element of claim 3 , wherein the equivalent diameter of the minute holes is 100 nm or less.
8 . The magnetic element of claim 1 , wherein the porous layer is formed by a nanoimprinting method.
9 . The magnetic element of claim 1 wherein the porous layer is formed utilizing resin self-organization.