Solid-state imaging device and electronic apparatus having a plurality of photoelectric conversion layer for corresponding wavelength regions

1. A solid-state imaging device comprising:

a photoelectric conversion film provided at a first side of a semiconductor substrate, the first side of the semiconductor substrate located opposite to a second side of the semiconductor substrate, wherein the photoelectric conversion film performs photoelectric conversion with respect to light of a predetermined wavelength region and transmits light of other wavelength regions;

a first photoelectric conversion layer provided within the semiconductor substrate, wherein the first photoelectric conversion layer performs photoelectric conversion with respect to the light of a first one of the other wavelength regions; and

a second photoelectric conversion layer provided within the semiconductor substrate, wherein the second photoelectric conversion layer performs photoelectric conversion with respect to the light of a second one of the other wavelength regions.

2. The solid-state imaging device according to claim 1 , further including:

a light-shielding film which defines a region in which light enters the semiconductor substrate,

wherein the light-shielding film is electrically connected to the semiconductor substrate.

3. The solid-state imaging device according to claim 2 , wherein the light-shielding film is provided with an opening which passes light to the first side of the semiconductor substrate, and

wherein the photoelectric conversion film has an area which is larger than that of the opening.

4. The solid-state imaging device according to claim 2 , wherein the light-shielding film is electrically connected to the semiconductor substrate for each pixel, and the light-shielding film transfers charge which is photoelectrically converted in the photoelectric conversion film to a charge accumulation unit provided within the semiconductor substrate.

5. The solid-state imaging device according to claim 4 , wherein the light-shielding film has an area which is larger than that of an upper portion of the charge accumulation unit, and the light-shielding film performs light shielding with respect to the charge accumulation unit.

6. The solid-state imaging device according to claim 5 , wherein the light-shielding film includes:

a portion having a larger area than that of the upper portion of the charge accumulation unit, and

a convex portion which protrudes from the portion of the larger area to the first side of the semiconductor substrate, wherein the convex portion is in electrical contact with a diffused region formed on a front layer portion of the semiconductor substrate in which light shielding is performed with respect to the charge accumulation unit by the convex portion.

7. The solid-state imaging device according to claim 5 , wherein the light-shielding film is in electrical contact with a diffused region formed on a front layer portion of the semiconductor substrate, and

wherein the diffused region has a larger area than that of the upper portion of the charge accumulation unit.

8. The solid-state imaging device according to claim 2 , wherein the light-shielding film includes a light-shielding region which performs light shielding between pixels, and a predetermined potential is applied to the light-shielding region.

9. The solid-state imaging device according to claim 2 , wherein the photoelectric conversion film is pinched by a lower electrode and an upper electrode, and

wherein a part of the light-shielding film is used as a wiring which supplies a predetermined bias voltage to the upper electrode from the first side of the semiconductor substrate.

10. The solid-state imaging device according to claim 2 , further including a first transfer gate that is configured to transfer charge from the photoelectric conversion film accumulated in a charge accumulation unit to a floating diffusion region.

11. The solid-state imaging device according to claim 1 , wherein the first photoelectric conversion layer, the second photoelectric conversion layer, and the photoelectric conversion film are vertically provided along an optical axis of input light.

12. An electronic apparatus comprising:

a solid-state imaging device which includes:

a photoelectric conversion film provided at a first side of a semiconductor substrate, the first side of the semiconductor substrate located opposite to a second side of the semiconductor substrate, wherein the photoelectric conversion film performs photoelectric conversion with respect to light of a predetermined wavelength region and transmits light of other wavelength regions,

a first photoelectric conversion layer provided within the semiconductor substrate, wherein the first photoelectric conversion layer performs photoelectric conversion with respect to the light of a first one of the other wavelength regions, and

a second photoelectric conversion layer provided within the semiconductor substrate, wherein the second photoelectric conversion layer performs photoelectric conversion with respect to the light of a second one of the other wavelength regions.

13. The electronic apparatus according to claim 12 , further including:

a light-shielding film which defines a region in which light enters the semiconductor substrate,

wherein the light-shielding film is electrically connected to the semiconductor substrate.

14. The electronic apparatus according to claim 13 , wherein the light-shielding film is provided with an opening which passes light to the first side of the semiconductor substrate, and

wherein the photoelectric conversion film has an area which is larger than that of the opening.

15. The electronic apparatus according to claim 13 , wherein the light-shielding film is electrically connected to the semiconductor substrate for each pixel, and the light-shielding film transfers charge which is photoelectrically converted in the photoelectric conversion film to a charge accumulation unit provided within the semiconductor substrate.

16. The electronic apparatus according to claim 15 , wherein the light-shielding film has an area which is larger than that of an upper portion of the charge accumulation unit, and the light-shielding film performs light shielding with respect to the charge accumulation unit.

17. The electronic apparatus according to claim 16 , wherein the light-shielding film includes:

a portion having a larger area than that of the upper portion of the charge accumulation unit; and

a convex portion which protrudes from the portion of the larger area to the first side of the semiconductor substrate, wherein the convex portion is electrically connected to a diffused region formed on a front layer portion of the semiconductor substrate in which light shielding is performed with respect to the charge accumulation unit by the convex portion.

18. The electronic apparatus according to claim 16 , wherein the light-shielding film is electrically connected to a diffused region and is formed on a front layer portion of the semiconductor substrate, and

wherein the diffused region has a larger area than that of the upper portion of the charge accumulation unit.

19. The electronic apparatus according to claim 13 , wherein the light-shielding film includes a light shielding region which performs light shielding between pixels, and a predetermined potential is applied to the light-shielding region.

20. The electronic apparatus according to claim 13 , wherein the photoelectric conversion film is pinched by a lower electrode and an upper electrode, and

wherein a part of the light-shielding film is used as a wiring which supplies a predetermined bias voltage to the upper electrode from the first side of the semiconductor substrate.