High SMSR unidirectional etched lasers and low back-reflection photonic device
View Patent ↗Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
1. A semiconductor photonic device, comprising:
a substrate;
an epitaxial structure deposited on said substrate;
a cavity having at least one segment formed in said epitaxial structure, said cavity forming a photonic element including an entrance facet and an exit facet; and
a laser with a high side mode suppression ratio formed in said epitaxial structure, said laser having a plurality of legs and an output facet for emitting an output beam that is coupled to said entrance facet of said photonic element, said laser output facet and said photonic element entrance facet being positioned relative to one another so that any portion of said output beam emitted from said laser output facet and reflected from said photonic element entrance facet is not coupled back into said laser, thereby reducing back reflection of light from said photonic device to said laser, wherein each of said plurality of legs has a respective length and total width, and wherein at least one of said plurality of legs has a plurality of air gaps each formed completely through the total width of said at least one leg to divide said at least one leg into separate leg sections.
2. The photonic device of claim 1 , wherein said cavity is V-shaped and wherein said at least one segment includes a first leg and a second leg.
3. The photonic device of claim 2 , further including an etched facet at or near the Brewster angle at a first, free end of said first leg of said cavity for further reducing back reflections.
4. The photonic device of claim 3 , wherein said first and second legs have second ends that are joined to form said V-shaped cavity, and wherein said exit facet is positioned at a joint formed between said first and second legs.
5. The photonic device of claim 4 , wherein said entrance facet is formed at a first, free end of said second leg of said V-shaped cavity.
6. The photonic device of claim 1 , wherein said laser is selected from the group comprising a ring laser and a V-shaped laser.
7. The photonic device of claim 6 , wherein said laser is a unidirectional laser.
8. The photonic device of claim 7 , wherein said unidirectional laser has an external mirror to reflect light from said output facet back into said laser.
9. The photonic device of claim 7 , wherein said plurality of air gaps each formed completely through the total width of said at least one leg comprises two gaps for enhancing the high side mode suppression ratio and unidirectionality of said laser.
10. The photonic device of claim 1 , wherein said photonic element is selected from the group comprising an electroabsorption modulator and a semiconductor optical amplifier.