Image sensor and manufacturing method thereof

1. An image sensor comprising:

a substrate;

photoelectric transducers and switching elements formed in layers on the substrate in this order, each of the photoelectric transducers including a hydrogenated amorphous silicon layer, each of the switching elements including an amorphous oxide semiconductor layer; and

a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, the blocking layer suppressing penetration of hydrogen separated from the hydrogenated amorphous silicon layers,

wherein the blocking layer includes a film made of SiC, and

the photoelectric transducers receive light traveling toward a top of the substrate, the top of the substrate being a side where the photoelectric transducers are formed, and

the blocking layer has a laminated structure in which the film made of SiC is sandwiched by SiN films.

2. The image sensor of claim 1 , wherein

the blocking layer is arranged between the photoelectric transducers and the switching elements.

3. The image sensor of claim 1 , wherein

each of the photoelectric transducers includes a hydrogenated amorphous silicon carbide layer laminated on a top of the hydrogenated amorphous silicon layer, the hydrogenated amorphous silicon carbide layer functioning as the blocking layer.

4. The image sensor of claim 3 , wherein

each of the photoelectric transducers further includes a hydrogenated amorphous silicon carbide layer laminated on a bottom of the hydrogenated amorphous silicon layer.

5. The image sensor of claim 3 , further comprising a plurality of pixels arranged in matrix, wherein

the hydrogenated amorphous silicon layers of the photoelectric transducers form a layer being continuous over the plurality of pixels, and

in each of the plurality of pixels, the hydrogenated amorphous silicon carbide layer on the top of the hydrogenated amorphous silicon layer and an upper electrode of the photoelectric transducer are isolated from the hydrogenated amorphous silicon carbide layers on the top of the hydrogenated amorphous silicon layers and upper electrodes of the photoelectric transducers in the other pixels.

6. The image sensor of claim 1 , further comprising a phosphor layer on a bottom surface of the substrate or over the switching elements, the bottom surface being an opposite surface of the substrate to a surface at a side where the photoelectric transducers are formed,

wherein the image sensor is an image sensor for a radiographic imaging apparatus.

7. An image sensor comprising:

a substrate;

photoelectric transducers and switching elements formed in layers on the substrate in this order, each of the photoelectric transducers including a hydrogenated amorphous silicon layer, each of the switching elements including an amorphous oxide semiconductor layer;

a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, the blocking layer suppressing penetration of hydrogen separated from the hydrogenated amorphous silicon layers; and

a phosphor layer on a bottom surface of the substrate or over the switching elements, the bottom surface being an opposite surface of the substrate to a surface at a side where the photoelectric transducers are formed, wherein:

the blocking layer is arranged between the photoelectric transducers and the switching elements,

the blocking layer includes a film made of

the photoelectric transducers receive light traveling toward a top of the substrate, the top of the substrate being a side where the photoelectric transducers are formed,

the blocking layer has a laminated structure in which the film made of SiC is sandwiched by SiN films, and

the image sensor is an image sensor for a radiographic imaging apparatus.