Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors
Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
1. A method of depositing a film comprising Si, C and N, the method comprising:
exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated cyclotrisilazane-based precursor having a structure represented by
wherein each R is independently is H or (CH 2 ) n CH y NA y , each R 1 , and R 2 are independently H, Br, Cl, I or (CH 2 ) n CH y NA y , n =0-6, y =0-1, A =C 1-6 linear, branched or cyclic alkyl or aryl group or hydrogen, with the proviso that at least one R 1 or R 2 is Br, Cl or I and at least one of R, R 1 or R 2 is (CH 2 ) n CH y NA y ; and
exposing the substrate to a nitrogen-containing plasma.
2. The method of claim 1 , wherein the nitrogen-containing plasma comprises ammonia, an amine or carbonitride.
3. A method of depositing a film comprising Si, C and N, the method comprising:
exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated cyclotrisilazane-based precursor having a structure represented by
wherein each R is independently is H or (CH 2 ) n CH y NA y , each R 1 , and R 2 are independently H, Br, Cl, I or (CH 2 ) n CH y NA y , n =0-6, y =0-1, A =C 1-6 linear, branched or cyclic alkyl or aryl group or hydrogen, with the proviso that at least one R 1 or R 2 is Br, Cl or I and at least one of R, R 1 or R 2 is (CH 2 ) n CH y NA y ;
exposing the substrate surface to a nitrogen precursor to provide a film; and
exposing the film to a densification plasma.
4. The method of claim 3 , further comprising exposing the film comprising Si and N to a carbon source.
5. The method of claim 4 , wherein the carbon source comprises exposing the film to a compound with a C═C bond.
6. A method of depositing a film comprising Si, C and N, the method comprising
exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated cyclotrisilazane-based precursor having a structure represented by
wherein each R is independently is H or (CH 2 ) n CH y NA y , each R 1 , and R 2 are independently H, Br, Cl, I or (CH 2 ) n CH y NA y , n =0-6, y =0-1, A =C 1-6 linear, branched or cyclic alkyl or aryl group or hydrogen, with the proviso that at least one R 1 or R 2 is Br, Cl or I and at least one of R, R 1 or R 2 is (CH 2 ) n CH y NA y ; and
exposing the substrate to a nitrogen-containing plasma or a nitrogen precursor.