IP Library Granted Patent US 9,379,172
Granted Patent B2
US 9,379,172 · App. 14/534,726 · Granted Jun 28, 2016

Light-emitting device and electronic apparatus

Inventors: Takehiko Kubota (Suwa, JP); Eiji Kanda (Suwa, JP); Ryoichi Nozawa (Tatsuno-machi, JP)
Assignee: SEIKO EPSON CORPORATION
H01L27/3276H01L27/1251H01L27/326H01L27/3262H01L27/3265H01L27/3279H01L29/78645H01L33/16
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Quick Facts
Patent No.
US 9,379,172
App. No.
14/534,726
Granted
Jun 28, 2016
Kind
B2
Abstract

A light-emitting device includes a drive transistor for controlling the quantity of current supplied to a light-emitting element, a capacitor element electrically connected to a gate electrode of the drive transistor, and an electrical continuity portion for electrically connecting the drive transistor and the light-emitting element, these elements being disposed on a substrate. The electrical continuity portion is disposed on the side opposite to the capacitor element with the drive transistor disposed therebetween.

Claims (39)

1. A light-emitting device, comprising;

a substrate;

a first data line that extends along a first direction;

a second data line that extends along the first direction;

a selection line that extends along a second direction intersecting the first direction;

a power line that is disposed above a plane of the substrate, the power line having a first portion and a second portion, the first portion extending along the second direction, the second portion extending along the first direction and intersecting with the selection line;

a light-emitting element that is disposed above the plane of the substrate, the light-emitting element having:

a first electrode;

a second electrode;

a luminescent layer that is disposed between the first electrode and the second electrode;

a first transistor having:

a first gate electrode;

a first semiconductor layer having a first channel region opposing the first gate electrode;

a first terminal;

a second terminal;

a first gate insulating film disposed between the first semiconductor layer and the first gate electrode, the first transistor controlling an electrical connection between the power line and the light-emitting element according to data signal supplied via the first data line, the data signal being supplied when a selection signal is supplied to the selection line;

a second transistor that is coupled between the first gate electrode and the first terminal of the first transistor, the second transistor having a second gate electrode, a third terminal and a fourth terminal; and

a first connecting portion that electrically connects the first gate electrode of the first transistor to the third terminal of the second transistor, the light emitting element being disposed between the first data line and the second data line in plan view, the second portion being disposed between the first data line and the first connecting portion in plan view.

2. The light-emitting device according to claim 1 , further comprising:

a capacitor element that is coupled to the first gate electrode,

the capacitor element being disposed between the first transistor and the second transistor, and

the power line overlapping the first transistor and the capacitor element when viewed from a vertical direction to the plane of the substrate.

3. The light-emitting device according to claim 1 , further comprising:

a third transistor that has a third gate electrode coupled to a scanning line;

the first gate electrode being set to a potential corresponding to the data signal supplied from the first data line through the third transistor in an on-state, and

a part of the third gate electrode of the third transistor not being overlapped with the power line.

4. The light-emitting device according to claim 1 ;

the second transistor having a dual-gate structure.

5. An electronic apparatus, comprising:

the light-emitting device according to claim 1 .

6. The light-emitting device according to claim 1 ;

the second transistor having a second semiconductor layer, the second semiconductor layer having a second channel region opposing the second gate electrode,

the first semiconductor layer connecting to the second semiconductor layer.

7. The light-emitting device according to claim 1 ;

the power line overlapping the first gate electrode when viewed from a vertical direction to the plane of the substrate, and

the power line not overlapping the second gate electrode when viewed from a vertical direction to the plane of the substrate.

8. The light-emitting device according to claim 1 , further comprising:

a second connecting portion that electrically connects the first terminal of the first transistor to the fourth terminal of the second transistor,

the first portion being disposed between the first data line and the second connecting portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2023
From: SEIKO EPSON CORPORATION
To: LUMITEK DISPLAY TECHNOLOGY LIMITED
Reel/Frame 065221/0372 →
Priority Claims (1)
JP 2005-345298 · Nov 30, 2005 · national
Continuity (3)
Division 13347260 · Jan 10, 2012
Continuation 11552745 · Oct 25, 2006
Related Publication 20150060865A1 · Mar 5, 2015