Wafer level packaged optical subassembly and transceiver module having same

1. An optical subassembly comprising:

a TSV submount layer carrying an active optical component; and

a sandwich cap bonded to the TSV submount layer; wherein:

the sandwich cap comprises a bottom spacer layer disposed above the TSV submount layer, a glass layer above the bottom spacer layer, and an upper spacer layer above the glass layer;

a cavity is defined in the bottom spacer layer and configured for accommodating the active optical component;

at least one first lens is formed on the glass layer and is opposite to the active optical component;

an alignment feature is formed in the upper spacer layer; and

the TSV submount layer comprises a structure with a first hole with metal deposited surrounding and a second hole filled by metal to achieve a hermetic package by sealing a silicon through via in the TSV submount layer.

2. The optical subassembly of claim 1 , wherein the alignment feature is a through silicon opening and is opposite to the cavity of the bottom spacer layer.

3. The optical subassembly of claim 1 , wherein the at least one first lens is formed on one side of the glass layer that is facing the cavity of the bottom spacer layer.

4. The optical subassembly of claim 1 further comprising a plurality of solder balls formed on a side of the TSV submount layer in a wafer level process.

5. The optical subassembly of claim 1 further comprising a first metal layer disposed above the TSV submount layer and a second metal layer disposed below the TSV submount layer, wherein the first metal layer and the second metal layer respectively comprise metal pads and routing traces, and are made of Al, Cu, or Au, while the first metal layer comprises an alignment mark configured for precisely placing the active optical component.

6. The optical subassembly of claim 1 , wherein the first lens is formed on the glass layer by wafer lever processing, and configured for collecting maximum light and making the light collimated.

7. The optical subassembly of claim 1 further comprising a metal sealing ring disposed on the TSV submount layer and configured for hermetic sealing and connecting the bottom spacer layer to a ground, and a metalized fiducial mark for optical alignment.

8. The optical subassembly of claim 7 , wherein the metal sealing ring and the metalized fiducial mark are formed in a same metal deposition process, while the metal sealing ring is made of Au or eutectic solder, and has a thickness less than 10 μm.

9. The optical subassembly of claim 1 , wherein the TSV submount layer is made of silicon and has a thickness ranging from 50 μm to 300 μm, the glass layer has a thickness ranging from 50 μm to 300 μm, the upper spacer layer is made of silicon and has a thickness of about 500 μm, while the bottom spacer layer is made of silicon and has a thickness less than 1000 μm.

10. The optical subassembly of claim 1 , wherein side walls of the cavity are slant or straight.

11. The optical subassembly of claim 1 further comprising an IC driver, wherein the IC driver is accommodated in the cavity.

12. The optical subassembly of claim 1 further comprising an IC driver, wherein the IC driver is integrated at the bottom of the optical subassembly by a flip chip.

13. An optical transceiver module comprising:

an optical subassembly, the optical subassembly comprising a TSV submount layer carrying an active optical component and a sandwich cap with an optical window and an alignment feature bonded to the TSV submount layer;

a jumper detachably mounted to the optical subassembly with the alignment feature; and

an optical fiber detachably mounted to the jumper; wherein:

the sandwich cap comprises a bottom spacer layer disposed above the TSV submount layer, a glass layer above the bottom spacer layer, and an upper spacer layer above the glass layer;

a cavity is defined in the bottom spacer layer and configured for accommodating the active optical component;

at least one first lens is formed at a side of the glass layer that is facing the cavity;

at least one second lens is formed on a bottom surface of the jumper towards the first lens; and

the TSV submount layer comprises a structure with a first hole with metal deposited surrounding and a second hole filled by metal to achieve a hermetic package by sealing a silicon through via in the TSV submount layer.

14. The optical transceiver module of claim 13 further comprising at least one third lens formed on a 45 degree surface of the jumper, and being configured for changing light path and further focusing the light coming from the optical subassembly.

15. The optical transceiver module of claim 13 , wherein the sandwich cap is formed by wafer level anodic bonding and bonded to the TSV submount layer by thermo compression.

16. A method for fabricating an optical subassembly, the method comprising:

preparing a TSV submount layer;

die bonding and wire bonding for mounting an active optical component to the TSV submount layer;

forming a sandwich cap with an optical window and an alignment feature; and

bonding the sandwich cap to the TSV submount layer; wherein:

the sandwich cap comprises a bottom spacer layer disposed above the TSV submount layer, a glass layer above the bottom spacer layer, and an upper spacer layer above the glass layer;

a cavity is defined in the bottom spacer layer and configured for accommodating the active optical component;

a first lens or lens array is formed at a side of the glass layer that is facing the cavity; and

the TSV submount layer comprises a structure with a first hole with metal deposited surrounding and a second hole filled by metal to achieve a hermetic package by sealing a silicon through via in the TSV submount layer.

17. The method of claim 16 , wherein the alignment feature is formed in the upper spacer layer and configured for detachably mounting a jumper that connects to an optical fiber.

18. The method of claim 16 , wherein the TSV submount layer is made of silicon and has a thickness ranging from 50 μm to 300 μm, the glass layer has a thickness ranging from 50 μm to 300 μm, the upper spacer layer is made of silicon and has a thickness of about 500 μm, while the bottom spacer layer is made of silicon and has a thickness less than 1000 μm.

19. The method of claim 16 further comprising forming a plurality of solder balls on a side of the TSV submount layer in a wafer level process.