Light-emitting device and manufacturing method thereof

1. A light-emitting device, comprising:

a light-emitting structure capable of emitting a light;

an electrode formed on a first side of the light-emitting structure;

a transparent dielectric structure formed on a second side of the light-emitting structure, wherein the transparent dielectric structure is aligned to a region of the electrode, and comprises a first transparent layer and a second transparent layer covering the first transparent layer, wherein the first transparent layer and the second transparent layer have different refractive indices; and

a reflective layer covering the transparent dielectric structure.

2. The light-emitting device of claim 1 , wherein the first transparent layer and the second transparent layer both contact the light-emitting structure.

3. The light-emitting device of claim 1 , wherein a region where the first transparent layer contacts the light-emitting structure is larger than a region where the second transparent layer contacts the light-emitting structure.

4. The light-emitting device of claim 1 , wherein the transparent dielectric structure is formed in a pattern corresponding to a pattern of the electrode.

5. The light-emitting device of claim 1 , wherein the transparent dielectric structure comprises a wider width than the electrode.

6. The light-emitting device of claim 1 , wherein the first transparent layer has a taper sidewall.

7. The light-emitting device of claim 1 , wherein a sidewall of the first transparent layer is inclined to the second side of the light-emitting structure by an angle between 20 and 80°.

8. The light-emitting device of claim 1 , wherein a cross sectional shape of the first transparent layer comprises trapezoid.

9. The light-emitting device of claim 1 , wherein the first transparent layer comprises a thickness proportional to a quarter of a dominant wavelength of the light and inversely proportional to a refractive index of the first transparent layer.

10. The light-emitting device of claim 1 , wherein the refractive index of the first transparent layer is between 1.5 and 3, and the refractive index of the second transparent layer is lower than 1.5.

11. The light-emitting device of claim 1 , wherein an interface between the light-emitting structure and the transparent dielectric structure comprises a rough surface.

12. The light-emitting device of claim 1 , wherein the reflective layer comprises a reflectivity higher than 80% with respect to the light emitted from the light-emitting structure.

13. The light-emitting device of claim 1 , further comprising a bonding layer and a substrate, wherein the substrate is bonded to the reflective layer by the bonding layer.

14. The light-emitting device of claim 13 , wherein a void is formed within the bonding layer or between the bonding layer and the substrate.

15. The light-emitting device of claim 1 , wherein a contact structure is formed on the second side of the light-emitting structure.

16. The light-emitting device of claim 15 , further comprising a transparent conductive layer covering the transparent dielectric structure and the contact structure, wherein the transparent conductive layer extends into a space between the contact structure and the transparent dielectric structure.

17. The light-emitting device of claim 15 , wherein the contact structure is provided to correspond to a region beyond the electrode.

18. The light-emitting device of claim 1 , wherein the first transparent layer comprises a thickness thicker than a thickness of the second transparent layer.

19. The light-emitting device of claim 18 , wherein a ratio between the thickness of the first transparent layer and the thickness of the second transparent layer ranges from 5 to 20.

20. The light-emitting device of claim 1 , wherein the refractive index of the first transparent layer is higher than that of the second transparent layer.