Semiconductor device and fabricating method thereof

1. A method of fabricating a semiconductor device, comprising:

forming first to fourth fins, each extending in a first direction, to be spaced apart in a second direction intersecting the first direction;

forming first and second gate lines, each extending in the second direction, on the first to fourth fins to be spaced apart in the first direction;

forming a first contact on the first gate line between the first and second fins;

forming a second contact on the first gate line between the third and fourth fins;

forming a third contact on the second gate line between the first and second fins;

forming a fourth contact on the second gate line between the third and fourth fins; and

forming a fifth contact on the first to fourth contacts to overlap the second contact and the third contact and not to overlap the first contact and the fourth contact,

wherein the fifth contact is arranged to diagonally traverse a quadrangle defined by the first to fourth contacts.

2. The method of claim 1 , wherein the first to fourth contacts are formed simultaneously.

3. The method of claim 1 , wherein forming the fifth contact comprises forming the fifth contact to pass through a point of symmetry of the quadrangle.

4. The method of claim 3 , wherein the fifth contact includes a first contact region connecting the point of symmetry to the second contact, and a second contact region connecting the point of symmetry to the third contact,

wherein the first contact region has a convex shape in a direction away from the fourth contact, and

wherein the second contact region has a convex shape in a direction away from the first contact.

5. The method of claim 1 , wherein forming the fifth contact comprises:

depositing a contact material;

selectively performing lithography on the contact material using a mask; and

etching a portion of the contact material subjected to the lithography to perform patterning,

wherein the mask includes a plurality of sub-mask patterns, and the sub-mask patterns are a staircase pattern.

6. The method of claim 1 , wherein forming the fifth contact comprises:

depositing a contact material;

selectively performing lithography on the contact material using a mask; and

etching a portion of the contact material subjected to the lithography to perform patterning,

wherein the portion of the contact material subjected to the lithography is etched by using a dry etching process.

7. The method of claim 6 , wherein the dry etching process is a reactive ion etching (RIE) process.

8. The method of claim 1 , wherein forming the fifth contact comprises:

depositing a contact material;

selectively performing lithography on the contact material using a mask; and

etching a portion of the contact material subjected to the lithography to perform patterning,

wherein the lithography is performed by controlling an illumination of the contact material such that a beam for the lithography has the same slope as a slope of the fifth contact.

9. The method of claim 1 , further comprising, before forming the first to fourth contacts, forming a fin-shaped field effect transistor (fin-FET) including the first or second gate line.

10. A method of fabricating a semiconductor device, comprising:

forming a plurality of fins, each extending in a first direction, to be spaced apart in a second direction intersecting the first direction;

forming a plurality of gate lines, each extending in the second direction, on the plurality of fins to be spaced apart in the first direction;

in a first region including first to fourth fins among the plurality of fins and first and second gate lines among the plurality of gate lines, forming a first contact on the first gate line between the first and second fins;

forming a second contact on the first gate line between the third and fourth fins in the first region;

forming a third contact on the second gate line between the first and second fins in the first region;

forming a fourth contact on the second gate line between the third and fourth fins in the first region;

forming a fifth contact on the first to fourth contacts in the first region to overlap the second contact and the third contact and not to overlap the first contact and the fourth contact; and

forming a sixth contact between the plurality of gate lines in a second region which does not overlap the first to fourth fins,

wherein the fifth contact is arranged to diagonally traverse a quadrangle defined by the first to fourth contacts.

11. The method of claim 10 , wherein the fifth and sixth contacts are formed Simultaneously.

12. The method of claim 10 , wherein forming the fifth contact comprises:

depositing a contact material;

selectively performing lithography on the contact material using a mask; and

etching a portion of the contact material subjected to the lithography to perform patterning,

wherein the lithography includes a source mask optimization (SMO) process to adjust at least one of a size of the mask, and a shape, focus and light quantity of an exposure beam by inputting a shape of the mask in advance.

13. The method of claim 12 , wherein adjusting the shape of the beam comprises controlling an illumination of the contact material such that the beam has the same slope as a slope of the fifth contact.

14. The method of claim 10 , further comprising, after forming the fifth contact, forming an interconnection structure including one or more metal lines and vias connecting the metal lines in a vertical direction on the first to sixth contacts to selectively connect the first to sixth contacts.

15. A method of fabricating a semiconductor device, comprising:

forming first to fourth fins, each extending in a first direction, to be spaced apart in a second direction intersecting the first direction;

forming first and second gate lines, each extending in the second direction, on the first to fourth fins to be spaced apart in the first direction;

forming a first contact on the first gate line between the first and second fins;

forming a second contact on the first gate line between the third and fourth fins;

forming a third contact on the second gate line between the first and second fins;

forming a fourth contact on the second gate line between the third and fourth fins; and

forming a fifth contact on the first to fourth contacts to overlap the second contact and the third contact and not to overlap the first contact and the fourth contact,

wherein the fifth contact is arranged to diagonally traverse a quadrangle defined by the first to fourth contacts,

wherein the first to fourth contacts are formed simultaneously,

wherein forming the fifth contact comprises forming the fifth contact to pass through a point of symmetry of the quadrangle.

16. The method of claim 15 , wherein the fifth contact includes a first contact region connecting the point of symmetry to the second contact, and a second contact region connecting the point of symmetry to the third contact,

wherein the first contact region has a convex shape in a direction away from the fourth contact, and

wherein the second contact region has a convex shape in a direction away from the first contact.

17. The method of claim 15 , wherein forming the fifth contact comprises:

depositing a contact material;

selectively performing lithography on the contact material using a mask; and

etching a portion of the contact material subjected to the lithography to perform patterning,

wherein the mask includes a plurality of sub-mask patterns, and the sub-mask patterns are a staircase pattern.

18. The method of claim 15 , wherein forming the fifth contact comprises:

depositing a contact material;

selectively performing lithography on the contact material using a mask; and

etching a portion of the contact material subjected to the lithography to perform patterning,

wherein the portion subjected to the lithography is etched by using a dry etching process.

19. The method of claim 18 , z Therein the dry etching process is a reactive ion etching (RIE) process.

20. The method of claim 15 , wherein forming the fifth contact comprises:

depositing a contact material;

selectively performing lithography on the contact material using a mask; and

etching a portion of the contact material subjected to the lithography to perform patterning,

wherein the lithography is performed by controlling an illumination such that a beam for the lithography has the same slope as a slope of the fifth contact.