Light-emitting device and the method of manufacturing the same
The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.
1. A light-emitting, device comprising:
a semiconductor light-emitting element having a top surface, a side surface, and an electrode layer formed in a plate configuration;
a transparent element covering the top surface and the side surface, and exposing a surface of the electrode layer;
an insulating layer arranged under the transparent element and not covering the surface of the electrode layer, the insulating layer having a first curved bottommost surface directly below a portion of the transparent element covering the side surface;
an intermediate layer electrically connected to the electrode layer, and interfacing the first curved bottommost surface of the insulating layer; and
a conductive layer electrically connected to and arranged under the intermediate layer and having a second curved bottommost surface not parallel to the electrode layer in a cross-sectional view.
2. The light-emitting device according to claim 1 , wherein the electrode layer is electrically connected to the conductive layer through the intermediate layer.
3. The light-emitting device according to claim 1 , wherein the conductive layer comprises gold, silver, or copper.
4. The light-emitting device according to claim 1 , wherein the conductive layer comprises a plurality of nano-size particles.
5. The light-emitting device according to claim 1 , wherein the intermediate layer comprises a portion having a bottommost surface not parallel to that of the electrode layer.
6. The light-emitting device according to claim 1 , wherein the conductive layer has a state change temperature lower than 300° C.
7. The light-emitting device according to claim 1 , further comprising an optical element arranged on the transparent element.
8. The light-emitting device according to claim 1 , wherein the semiconductor light-emitting element comprises a substrate arranged on one side of the semiconductor light-emitting element.
9. The light-emitting device according to claim 8 , wherein the conductive layer is positioned at a side of the semiconductor light-emitting element opposite to the substrate.