Method for manufacturing board device
View Patent ↗According to one embodiment, provided is an array substrate that can effectively prevent an oxide conductive film and a silicon nitride film on the oxide conductive film from peeling without deteriorating reliability. A method for manufacturing the array substrate includes a surface treatment step and a nitride film forming step. In the surface treatment step, by plasma discharge, the oxide conductive film is cleaned without being reduced, and surface layers of the insulating film layer not covered by the oxide conductive film and portions of the insulating film layer in the regions covered by the oxide conductive film are etched to form recesses leading to portions under the oxide conductive film. In the nitride film forming step, successively from the surface treatment step, the silicon nitride film is formed by plasma CVD so as to cover the recesses and the oxide conductive film.
1. A method for manufacturing a board device that includes a substrate, an insulating film layer provided on the substrate, an oxide conductive film provided on portions of the insulating film layer, and a silicon nitride film provided on the oxide conductive film, comprising:
a surface treatment step in which, by plasma discharge, the oxide conductive film is cleaned without being reduced, and surface layers of the insulating film layer not covered by the oxide conductive film and portions of the insulating film layer in the regions covered by the oxide conductive film are etched to form recesses leading to portions under the oxide conductive film; and
a nitride film forming step in which, successively from the surface treatment step, the silicon nitride film is formed by plasma CVD so as to cover the recesses and the oxide conductive film.
2. The method for manufacturing a board device according to claim 1 , wherein
in the surface treatment step, any gas of nitrous oxide, nitrogen, and argon is used.
3. The method for manufacturing a board device according to claim 2 , wherein
the surface treatment step is performed at a temperature of 150° C. to 300° C.
4. The method for manufacturing a board device according to claim 1 , wherein
the scraping amount of the insulating film layer by etching in the surface treatment step is 0.08 μm or less.
5. The method for manufacturing a board device according to claim 1 , wherein
the etching time in the surface treatment step is shorter than one minute.
6. The method for manufacturing a board device according to claim 1 , wherein
the insulating film layer is made of an organic substance.
7. The method for manufacturing a board device according to claim 1 , wherein
the oxide conductive film is made of ITO, and has translucency.
8. The method for manufacturing a board device according to claim 1 , wherein
the method is a method for manufacturing a board device for a liquid crystal display device.