Surface acoustic wave device and oscillator circuit

1. A surface acoustic wave device, comprising:

a quartz substrate constituted such that a surface acoustic wave is to propagate on a surface with an Euler angle of (0°, θ, 0°), a cut angle θ having 16°<θ≦18.5°; and

a periodic structure portion disposed on the quartz substrate, the periodic structure portion including a plurality of electrodes extending in a direction intersecting with a direction of the propagation of the surface acoustic wave, the electrodes being disposed in parallel to one another along the propagation direction, the periodic structure portion being constituted to mainly contain aluminum, wherein

when a width dimension of the electrode in the propagation direction and a separation dimension between the electrodes adjacent to one another are respectively defined as L and S, a metallization ratio η (η=L÷(L+S)) is set to 0.4 or less.

2. The surface acoustic wave device according to claim 1 , wherein

the periodic structure portion has the width dimension and the separation dimension such that the surface acoustic wave with a wavelength corresponding to a frequency of 600 MHz to 2 GHz propagates.

3. The surface acoustic wave device according to claim 1 , wherein

assuming that a wavelength of the surface acoustic wave to propagate on the quartz substrate corresponding to an arrangement period of the electrodes is a period length λ and a film thickness dimension of the electrode is h, a wavelength-ratio film thickness h/λ that is a value obtained by dividing the film thickness dimension h by the period length λ has a range expressed by a following formula that is a function of the cut angle θ:

h/λ≧− 0.0004×θ 2 +0.0189×θ−0.1983.

4. The surface acoustic wave device according to claim 2 , wherein

assuming that a wavelength of the surface acoustic wave to propagate on the quartz substrate corresponding to an arrangement period of the electrodes is a period length λ and a film thickness dimension of the electrode is h, a wavelength-ratio film thickness h/λ that is a value obtained by dividing the film thickness dimension h by the period length λ has a range expressed by a following formula that is a function of the cut angle θ:

h/λ≧− 0.0004×θ 2 +0.0189×θ−0.1983.

5. The surface acoustic wave device according to claim 3 , wherein

the wavelength-ratio film thickness h/λ has a range expressed by a following formula:

h/λ≦− 0.0004×θ 2 +0.0184×θ−0.1853.

6. The surface acoustic wave device according to claim 4 , wherein

the wavelength-ratio film thickness h/λ has a range expressed by a following formula:

h/λ≦− 0.0004×θ 2 +0.0184×θ−0.1853.

7. The surface acoustic wave device according to claim 1 , further comprising:

busbars disposed to extend along the propagation direction on one end side and another end side in a longitudinal direction of each electrode such that the electrodes alternately intersect with one another in a comb shape so as to form an IDT electrode in the periodic structure portion; and

a reflector that includes:

reflector electrode fingers, disposed in a plurality of positions separated from one another along the propagation direction, the reflector electrode fingers extending along the electrode, the reflector electrode fingers being disposed on both sides of the propagation direction viewed from the periodic structure portion; and

reflector busbars that connect respective one end sides to one another and connect respective another end sides to one another in the reflector electrode fingers, wherein

the surface acoustic wave device functions as a resonator.

8. The surface acoustic wave device according to claim 2 , further comprising:

busbars disposed to extend along the propagation direction on one end side and another end side in a longitudinal direction of each electrode such that the electrodes alternately intersect with one another in a comb shape so as to form an IDT electrode in the periodic structure portion; and

a reflector that includes:

reflector electrode fingers, disposed in a plurality of positions separated from one another along the propagation direction, the reflector electrode fingers extending along the electrode, the reflector electrode fingers being disposed on both sides of the propagation direction viewed from the periodic structure portion; and

reflector busbars that connect respective one end sides to one another and connect respective another end sides to one another in the reflector electrode fingers, wherein

the surface acoustic wave device functions as a resonator.

9. The surface acoustic wave device according to claim 3 , further comprising:

busbars disposed to extend along the propagation direction on one end side and another end side in a longitudinal direction of each electrode such that the electrodes alternately intersect with one another in a comb shape so as to form an IDT electrode in the periodic structure portion; and

a reflector that includes:

reflector electrode fingers, disposed in a plurality of positions separated from one another along the propagation direction, the reflector electrode fingers extending along the electrode, the reflector electrode fingers being disposed on both sides of the propagation direction viewed from the periodic structure portion; and

reflector busbars that connect respective one end sides to one another and connect respective another end sides to one another in the reflector electrode fingers, wherein

the surface acoustic wave device functions as a resonator.

10. The surface acoustic wave device according to claim 4 , further comprising:

busbars disposed to extend along the propagation direction on one end side and another end side in a longitudinal direction of each electrode such that the electrodes alternately intersect with one another in a comb shape so as to form an IDT electrode in the periodic structure portion; and

a reflector that includes:

reflector electrode fingers, disposed in a plurality of positions separated from one another along the propagation direction, the reflector electrode fingers extending along the electrode, the reflector electrode fingers being disposed on both sides of the propagation direction viewed from the periodic structure portion; and

reflector busbars that connect respective one end sides to one another and connect respective another end sides to one another in the reflector electrode fingers, wherein

the surface acoustic wave device functions as a resonator.

11. The surface acoustic wave device according to claim 5 , further comprising:

busbars disposed to extend along the propagation direction on one end side and another end side in a longitudinal direction of each electrode such that the electrodes alternately intersect with one another in a comb shape so as to form an IDT electrode in the periodic structure portion; and

a reflector that includes:

reflector electrode fingers, disposed in a plurality of positions separated from one another along the propagation direction, the reflector electrode fingers extending along the electrode, the reflector electrode fingers being disposed on both sides of the propagation direction viewed from the periodic structure portion; and

reflector busbars that connect respective one end sides to one another and connect respective another end sides to one another in the reflector electrode fingers, wherein

the surface acoustic wave device functions as a resonator.

12. The surface acoustic wave device according to claim 6 , further comprising:

busbars disposed to extend along the propagation direction on one end side and another end side in a longitudinal direction of each electrode such that the electrodes alternately intersect with one another in a comb shape so as to form an IDT electrode in the periodic structure portion; and

a reflector that includes:

reflector electrode fingers, disposed in a plurality of positions separated from one another along the propagation direction, the reflector electrode fingers extending along the electrode, the reflector electrode fingers being disposed on both sides of the propagation direction viewed from the periodic structure portion; and

reflector busbars that connect respective one end sides to one another and connect respective another end sides to one another in the reflector electrode fingers, wherein

the surface acoustic wave device functions as a resonator.

13. An oscillator circuit, comprising:

the surface acoustic wave device according to claim 7 .

14. An oscillator circuit, comprising:

the surface acoustic wave device according to claim 8 .

15. An oscillator circuit, comprising:

the surface acoustic wave device according to claim 9 .

16. An oscillator circuit, comprising:

the surface acoustic wave device according to claim 10 .

17. An oscillator circuit, comprising:

the surface acoustic wave device according to claim 11 .

18. An oscillator circuit, comprising:

the surface acoustic wave device according to claim 12 .

19. A surface acoustic wave device, comprising:

a quartz substrate constituted such that a surface acoustic wave is to propagate on a surface with an Euler angle of (0°, θ, 0°), a cut angle θ having 16°<θ≦18.5°, wherein the cut angle θ having 16°<θ≦18.5° is larger than a cut angle θ′ having 15°≦θ′≦16° of an LST-cut quartz substrate, wherein an upper limit of the cut angle θ′ of the LST-cut quartz substrate is 16°; and

a periodic structure portion disposed on the quartz substrate, the periodic structure portion including a plurality of electrodes extending in a direction intersecting with a direction of the propagation of the surface acoustic wave, the electrodes being disposed in parallel to one another along the propagation direction, the periodic structure portion being constituted to mainly contain aluminum, wherein

when a width dimension of the electrode in the propagation direction and a separation dimension between the electrodes adjacent to one another are respectively defined as L and S, a metallization ratio η (η=L÷(L+S)) is set to 0.4 or less.