Element and formation method of film
A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low cost and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.
1. An element comprising:
a first electrode over an insulating film;
a second electrode over the insulating film;
a first conductive film electrically connected to the first electrode; and
a second conductive film electrically connected to the second electrode,
wherein the second electrode is located apart from the first electrode, and
wherein each of the first electrode and the second electrode includes graphene including oxygen.
2. The element according to claim 1 ,
wherein the insulating film includes a first opening at which the first electrode is electrically connected to the first conductive film and a second opening at which the second electrode is electrically connected to the second conductive film.
3. The element according to claim 1 ,
wherein a divider is over the insulating film, and is between the first electrode and the second electrode,
wherein the divider includes graphene oxide, and
wherein the divider has lower conductivity than the first electrode and the second electrode.
4. A touch panel comprising the element according to claim 1 .
5. The element according to claim 1 ,
wherein a percentage of oxygen in the graphene is more than 0 atomic % and less than or equal to 20 atomic %.
6. An element comprising:
a first electrode over an insulating film, the first electrode including pieces;
a second electrode over the insulating film;
a first conductive film electrically connected to the first electrode;
a second conductive film electrically connected to the second electrode; and
a third conductive film electrically connected to the pieces,
wherein each of the pieces and the second electrode includes graphene,
wherein the third conductive film intersects with the second electrode with the insulating film sandwiched therebetween ,and
wherein the graphene includes oxygen.
7. The element according to claim 6 ,
wherein the insulating film includes a first opening at which the first electrode is electrically connected to the first conductive film and a second opening at which the second electrode is electrically connected to the second conductive film.
8. The element according to claim 6 , further comprising a divider between each of the pieces and the second electrode,
wherein the divider includes graphene oxide, and
wherein the divider has lower conductivity than the first electrode and the second electrode.
9. A touch panel comprising the element according to claim 6 .
10. The element according to claim 6 ,
wherein a percentage of oxygen in the graphene is more than 0 atomic % and less than or equal to 20 atomic %.
11. A formation method of a film including graphene, comprising:
a first step of forming a film including graphene oxide by applying a dispersion liquid in which graphene oxide is dispersed over a substrate and removing dispersion medium from the dispersion liquid applied onto the substrate;
a second step of immersing the film including graphene oxide in an acidic solution;
a third step of selectively removing the film including graphene oxide by a photolithography technique; and
a fourth step of reducing graphene oxide included in the film including graphene oxide,
wherein the first step, the second step, the third step, and the fourth step are performed in this order.
12. The formation method of a film including graphene according to claim 11 ,
wherein the first step is further performed n times before the second step so that the film including graphene oxide has a stacked structure, and
wherein n is a natural number of more than or equal to 1.
13. The formation method of a film including graphene according to claim 11 , wherein the dispersion liquid is applied using a blade.
14. The formation method of a film according to claim 11 , wherein the substrate has flexibility.
15. A formation method of a film including graphene, comprising:
a first step of forming a film including graphene oxide by applying a dispersion liquid in which graphene oxide is dispersed over a substrate and removing dispersion medium from the dispersion liquid applied onto the substrate; and
a second step of selectively heating a first region of the film including graphene oxide so that graphene oxide in the first region is reduced,
wherein after the second step, the film including graphene oxide has the first region including graphene and a second region adjacent to the first region and including graphene oxide, and
wherein the first step and the second step are performed in this order.
16. The formation method of a film including graphene according to claim 15 ,
wherein the first step is further performed n times before the second step so that the film has a stacked structure consisting of films including graphene oxide;
wherein n is a natural number of more than or equal to 1.
17. The formation method of a film including graphene according to claim 15 , wherein the dispersion liquid is applied using a blade.
18. The formation method of a film including graphene according to claim 15 , wherein the substrate has flexibility.
19. The formation method of a film including graphene according to claim 15 ,
wherein in the second step, the first region of the film including graphene oxide is irradiated with laser beam.