Laterally injected light-emitting diode and laser diode
A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.
1. A laterally-injected light-emitting device, comprising:
a p-type superlattice layer having a slanted end facet;
an III-nitride multiple quantum well active layer deposited on the slanted end facet for laterally injecting holes from the p-type superlattice layer thereinto; and
an n-type layer for injecting electrons into the III-nitride multiple quantum well active layer, thereby generating light emission from the active layer when the electrons and holes combine.
2. The laterally-injected light-emitting device of claim 1 , wherein the p-type superlattice comprises alternating p-type Al x Ga 1-x N and p-type Al y Ga 1-y N layers, where x and y are different compositions.
3. The laterally-injected light-emitting device of claim 2 , wherein the p-type superlattice layer is doped p-type with Mg acceptors.
4. The laterally-injected light-emitting device of claim 1 , wherein the slanted end facet makes a shallow angle to the plane of the p-type superlattice layer.
5. The laterally-injected light-emitting device of claim 4 , wherein the shallow angle is less than 30 degrees.
6. The laterally-injected light-emitting device of claim 1 , wherein the n-type layer is deposited on the III-nitride multiple quantum well active layer.
7. The laterally-injected light-emitting device of claim 1 , wherein the n-type layer is disposed above or below the p-type superlattice layer to laterally inject electrons into the III-nitride multiple quantum well active layer.
8. The laterally-injected light-emitting device of claim 1 , wherein the n-type layer comprises n-type AlGaN.
9. The laterally-injected light-emitting device of claim 1 , wherein the n-type layer comprises an n-type superlattice.
10. The laterally-injected light-emitting device of claim 1 , further comprising a p-contact to the p-type superlattice layer and an n-contact to the n-type layer.
11. The laterally-injected light-emitting device of claim 10 , wherein the p-contact or the n-contact is a backside contact.
12. The laterally-injected light-emitting device of claim 1 , wherein the p-type superlattice layer and the n-type layer form at least one trapezoidal ridge structure and the III-nitride multiple quantum well active layer is deposited on sidewalls of the at least one trapezoidal ridge structure.
13. The laterally-injected light-emitting device of claim 12 , wherein the p-type superlattice layer is disposed on top of the n-type layer in each of the ridge structures and wherein the device further comprises a finger electrode p-contact to the p-type superlattice layer at the top of each ridge and a finger electrode n-contact to the n-type layer at the bottom of each ridge.
14. The laterally-injected light emitting device of claim 13 , wherein the device comprises a plurality of parallel trapezoidal ridge structures and wherein the plurality of finger electrode p-contacts and finger electrode n-contacts form an interdigitated structure.
15. The laterally-injected light-emitting device of claim 12 , wherein the n-type layer is disposed on top of the p-type superlattice layer in each of the ridge structures and wherein the device further comprises a finger electrode n-contact to the n-type layer at the top of each ridge and a finger electrode p-contact to the p-type superlattice layer at the bottom of each ridge.
16. The laterally-injected light emitting device of claim 15 , wherein the device comprises a plurality of parallel trapezoidal ridge structures and wherein the plurality of finger electrode p-contacts and finger electrode n-contacts form an interdigitated structure.
17. A laterally-injected light-emitting device, comprising;
an III-nitride multiple quantum well active layer embedded laterally in a mesa heterostructure;
an n-type layer on a side of the mesa that laterally injects electrons into the III-nitride multiple quantum well active layer; and
a p-type layer on the opposing side of the mesa that laterally injects holes into the III-nitride multiple quantum well active layer, thereby generating light emission from the active layer when the electrons and holes combine.
18. The laterally-injected light-emitting device of claim 17 , wherein the III-nitride multiple quantum well active region comprises AlGaN and the p-type layer comprises a p-type superlattice.
19. The laterally-injected light-emitting device of claim 18 , wherein the p-type superlattice comprises alternating p-type Al x Ga 1-x N and p-type Al y Ga 1-y N layers, where x and y are different compositions.
20. The laterally-injected light-emitting device of claim 18 , wherein the p-type layer is doped p-type with Mg acceptors.
21. The laterally-injected light-emitting device of claim 17 , further comprising a low-refractive-index dielectric cladding layer on at least one of the top and bottom of the mesa to provide an edge-emitting waveguide structure.
22. The laterally-injected light-emitting device of claim 17 , wherein the III-nitride multiple quantum well active region comprises InGaN and the p-type layer comprises p-type GaN.
23. The laterally-injected light-emitting device of claim 22 , further comprising a high reflectivity coating on the top or the bottom of the mesa to provide a vertical-emitting structure.
24. The laterally-injected light-emitting device of claim 23 , wherein the high reflectivity coating comprises a multi-layer dielectric coating or metal coating.
25. The laterally-injected light-emitting device of claim 24 , wherein the multi-layer dielectric coating comprises HfO 2 /SiO 2 or TiO 2 /SiO 2 .