IP Library Granted Patent US 9,471,189
Granted Patent B2
US 9,471,189 · App. 14/549,671 · Granted Oct 18, 2016

Sensing electrode structure

Inventor: Tzu-Wei Liu (Zhubei, TW)
Assignee: MStar Semiconductor, Inc.
G06F3/044G06F2203/04107
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Quick Facts
Patent No.
US 9,471,189
App. No.
14/549,671
Granted
Oct 18, 2016
Kind
B2
Abstract

A sensing electrode structure formed on a substrate of a touch device is provided. The sensing electrode structure includes: a first sensing electrode row; a second sensing electrode row, parallel to the first sensing electrode row, including a plurality of second sensing electrode units; and a guard ring, surrounding the second sensing electrode row, including a plurality of guard electrodes arranged between each two of the second sensing electrode units.

Claims (21)

1. A sensing electrode structure, formed on a substrate of a touch device, comprising:

a first sensing electrode row;

a second sensing electrode row, parallel to the first sensing electrode row, comprising a plurality of second sensing electrode units; and

a guard ring, surrounding the second sensing electrode row, comprising a plurality of guard electrodes arranged between each two of the second sensing electrode units,

wherein the first sensing electrode row comprises a plurality of first sensing electrode units, and each of the first sensing electrode units corresponds to one of the second sensing electrode units.

2. The sensing electrode structure according to claim 1 , wherein the guard ring comprises a first guard ring portion and a second guard ring portion that are disconnected, and each of the guard electrodes is connected to one of the first guard ring portion and the second guard ring portion.

3. The sensing electrode structure according to claim 1 , wherein a planar contour of an electrode of the first sensing electrode unit is identical to a planar contour of an electrode of the second sensing electrode unit.

4. The sensing electrode structure according to claim 1 , wherein a planar contour of an electrode of the first sensing electrode unit mirrors a planar contour of an electrode of the corresponding second sensing electrode unit.

5. The sensing electrode structure according to claim 1 , wherein the first sensing electrode unit comprises a first electrode and a second electrode corresponding to the first electrode, the first electrode comprises more than one pseudo-triangular electrode, and the second electrode comprises a pseudo-triangular electrode facing the pseudo-triangular electrode of the first electrode; the second sensing electrode unit comprises a third electrode and a fourth electrode corresponding to the third electrode, the third electrode comprises more than one pseudo-triangular electrode, and the fourth electrode comprises a pseudo-triangular electrode facing the pseudo-triangular electrode of the third electrode.

6. The sensing electrode structure according to claim 5 , wherein the second sensing electrode unit further comprises a third conducting wire connected to the third electrode; a distance between the third conducting wire and the first electrode is substantially equal to a distance between the third electrode and the nearest guard electrode.

7. The sensing electrode structure according to claim 5 , wherein the second sensing electrode unit further comprises a third conducting wire connected to the third electrode, and the adjacent second sensing electrode further comprises a fourth conducting line connected to the fourth electrode unit of the second sensing electrode unit; a distance between the third conducting wire and the fourth conducting wire is substantially equal to a width of the nearest guard electrode.

8. The sensing electrode structure according to claim 5 , wherein the second sensing electrode unit further comprises a third conducting wire connected to the third electrode, and the adjacent second sensing electrode further comprises a fourth conducting line connected to the fourth electrode unit of the second sensing electrode unit; a distance between the third conducting wire and the first electrode, a distance between the third electrode and the nearest guard electrode, and a width of the guard electrode nearest to the third electrode are substantially equal.

9. The sensing electrode structure according to claim 1 , wherein widths of the guard electrodes are different from a width of the guard ring.

10. The sensing electrode structure according to claim 1 , further comprising:

a third sensing electrode row, parallel to the first sensing electrode row, comprising a plurality of third sensing electrode units; and

a fourth sensing electrode row, parallel to the first sensing electrode row;

wherein, the guard ring surrounds the third sensing electrode row, and comprises a plurality of guard electrodes arranged between each two of the third sensing electrode units.

11. The sensing electrode structure according to claim 1 , further comprising:

a third sensing electrode row, parallel to the first sensing electrode row, comprising a plurality of third sensing electrode units;

a fourth sensing electrode row, parallel to the first sensing electrode row; and

a second guard ring portion, surrounding the third sensing electrode row, comprising a plurality of guard rings arranged between the third sensing electrode units.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2022
From: ILI TECHNOLOGY HOLDING CORPORATION
To: ILI TECHNOLOGY CORP.
Reel/Frame 060262/0911 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 5, 2021
From: ILI TECHNOLOGY CORP.
To: ILI TECHNOLOGY HOLDING CORPORATION
Reel/Frame 055257/0614 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 27, 2018
From: MSTAR SEMICONDUCTOR, INC.
To: ILI TECHNOLOGY CORP.
Reel/Frame 047597/0116 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2014
From: LIU, TZU-WEI
To: MSTAR SEMICONDUCTOR, INC.
Reel/Frame 034228/0206 →
Priority Claims (1)
TW 102142674 A · Nov 22, 2013 · national
Continuity (1)
Related Publication 20150145823A1 · May 28, 2015