IP Library › Patent Application 14551545
Patent Application
App. No. 14/551,545

CRUCIBLES MADE WITH THE COLD FORM PROCESS

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Quick Facts
Patent No.
US None
App. No.
14/551,545
Abstract

A crucible for growing crystals, the crucible being formed from Molybdenum and Rhenium. A crucible for growing crystals, the crucible being formed from a metal selected from Group V of the Periodic Table of the Elements. A crucible for growing crystals, the crucible comprising a body and a layer formed on at least a portion of the body, the layer being formed out of Molybdenum.

Claims (46)

1 . A crucible for growing crystals, the crucible including a material selected from tantalum, niobium, a tantalum alloy, and a niobium alloy, wherein the material has an ASTM grain size of 7 to 14.

2 . The crucible of claim 1 , wherein the material is tantalum.

3 . The crucible of claim 1 , wherein the material is niobium.

4 . The crucible of claim 1 , wherein the material is a tantalum alloy.

5 . The crucible of claim 1 , wherein the material is a niobium alloy.

6 . The crucible of claim 1 , wherein the material is niobium C-103 alloy.

7 . The crucible of claim 1 , wherein the material is one of a tantalum alloy and a niobium alloy, and wherein the material further comprises at least one of silicon and thorium.

8 . The crucible of claim 1 , wherein the material is one of a tantalum alloy and a niobium alloy, and wherein the material further comprises up to 700 ppm silicon.

9 . The crucible of claim 1 , wherein the material is one of a tantalum alloy and a niobium alloy, and wherein the material further comprises up to 500 ppm thorium.

10 . The crucible of claim 1 , wherein the crucible is carbonized prior to use.

11 . The crucible of claim 10 , wherein the crucible is carbonized by annealing the crucible in a carbon-containing atmosphere.

12 . The crucible of claim 10 , wherein the crucible is carbonized at a temperature of 2200° to 2500° C.

13 . The crucible of claim 1 , wherein the material has an ASTM grain size of 10 to 14.

14 . A method for forming a crucible for growing crystals, the method comprising:

forming a preform blank of a material selected from tantalum, niobium, a tantalum alloy, and a niobium alloy; and

flowforming the preform blank into a crucible at a temperature below the recrystallization temperature of the material.

15 . The method of claim 14 , wherein the material is tantalum.

16 . The method of claim 14 , wherein the material is niobium.

17 . The method of claim 14 , wherein the material is a tantalum alloy.

18 . The method of claim 14 , wherein the material is a niobium alloy.

19 . The method of claim 14 , wherein the material is niobium C-103 alloy.

20 . The method of claim 14 , wherein the material is one of a tantalum alloy and a niobium alloy, and wherein the material further comprises at least one of silicon and thorium.

21 . The method of claim 14 , wherein the material is one of a tantalum alloy and a niobium alloy, and wherein the material further comprises up to 700 ppm silicon.

22 . The method of claim 14 , wherein the material is one of a tantalum alloy, and a niobium alloy and further comprises up to 500 ppm thorium.

23 . The method of claim 14 , further comprising, after flowforming the preform blank, carbonizing the crucible prior to use.

24 . The method of claim 23 , wherein carbonizing the crucible comprises annealing the crucible in a carbon-containing atmosphere.

25 . The method of claim 23 , wherein carbonizing the crucible comprises carbonizing the crucible at a temperature of 2200° to 2500° C.

26 . The method of claim 14 , wherein the material has an ASTM grain size of 7 to 14.

27 . The method of claim 14 , wherein the material has an ASTM grain size of 10 to 14.

28 . A method for growing sapphire crystals, the method comprising:

melting alumina in a crucible, the crucible including a material selected from tantalum, niobium, a tantalum alloy, and a niobium alloy; and

crystallizing the alumina to form sapphire crystals.

29 . The method of claim 28 , wherein the material is tantalum.

30 . The method of claim 28 , wherein the material is niobium.

31 . The method of claim 28 , wherein the material is a tantalum alloy.

32 . The method of claim 28 , wherein the material is a niobium alloy.

33 . The method of claim 28 , wherein the material is niobium C-103 alloy.

34 . The method of claim 28 , wherein the material is one of a tantalum alloy and a niobium alloy, and further comprises least one of silicon and thorium.

35 . The method of claim 28 , wherein the material is one of a tantalum alloy and a niobium alloy, and further comprises up to 700 ppm silicon.

36 . The method of claim 28 , wherein the material is one of a tantalum alloy and a niobium alloy, and further comprises up to 500 ppm thorium.

37 . The method of claim 28 , wherein the crucible is a flowformed crucible.

38 . The method of claim 28 , wherein the crucible is a carbonized crucible.

39 . The method of claim 28 , wherein the crucible is a carbonized flowformed crucible.

40 . The method of claim 28 , wherein the material has an ASTM grain size of 7 to 14.

41 . The method of claim 28 , wherein the material has an ASTM grain size of 10 to 14.

42 . The method of claim 28 , wherein the alumina is melted in the crucible at a temperature up to 2300° C.